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Prodi Sarjana dan Pascasarjana Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam Institut Teknologi Bandung Gedung Fisika, Jalan Ganesa 10, Bandung 40132, INDONESIA
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INDONESIA
Indonesian Journal of Physics (IJP)
Published by Institut Teknologi Bandung
ISSN : 23018151     EISSN : 29870828     DOI : https://doi.org/10.5614/itb.ijp
Core Subject : Science, Engineering,
Astronomy Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering
Indonesian Journal of Physics welcomes full research articles in the area of Sciences and Engineering from the following subject areas: Physics, Mathematics, Astronomy, Mechanical Engineering, Civil and Structural Engineering, Chemical Engineering, Electrical Engineering, Geotechnical Engineering, Engineering Science, Environmental Science, Materials Science, and Earth-Surface Processes. Authors are invited to submit articles that have not been published previously and are not under consideration elsewhere.
Arjuna Subject : Fisika dan Astronomi - Fisika Nuklir dan Molekuler, dan Ooptik
Articles 334 Documents
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Studi Sifat Listrik pada Film GaN Doping Mg yang Ditumbuhkan dengan Metode Metalorganic Chemical Vapor Deposition (MOCVD) Berbantuan Plasma A. Subagio; Erzam S.H.; Sugianto Sugianto; M. Budiman; M. Barmawi
Indonesian Journal of Physics Vol 13 No 4 (2002): Vol. 13 No.4, October 2002
Publisher : Institut Teknologi Bandung

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Abstract

Mg-doped GaN films have been grown on (0001) sapphire substrates by employing plasma-assisted Metalorganic Chemical Vapor Deposition (MOCVD) method. Trimethylgallium (TMGa) and N2 were used as Ga and N precursors, respectively and bis-cyclopentadienyl magnesium (Cp2Mg) as a p-type doping source. The process of growing thin film was started by deposition the buffer layer on 0.08 sccm TMGa and 140 sccm N2 flow rates. Under this condition a 260 Å thick buffer layer was achieved. The ratio of Cp2Mg and TMGa flow rate was varied 0.3; 1; 2; 5; 7 and 10 %. Hall measurements the show that type of GaN film in 0.3% was n-type, in 1% the type was not clear, while in 2, 5, 7 and 10% GaN films were absolutely of p-type. The 10% Mg-doped GaN film had the highest hole mobility of 55.71 cm2/Vs. It also had the hole concentration of 1.14x1019 cm-3 and resistivity of 9.87x10-3ohm.cm.
Effect of Growth Temperature on Electrical Properties of p-Gab/n-GaAs Heterointerfaces Grown by Metalorganic Chemical Vapour Deposition. Agus Subekti
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

Electrical characterization of heterojunction diodes between p-GaSb/n-GaAs grown by metalorganic chemical vapour deposition have been investigated. At growth temperatures of 540oC and 580oC, the interface region of GaAs show n-type doping level of 5 × 1017 and 2 × 1018 cm-3, respectively. The heating process during GaSb growth was likely responsible for the change of the doping level of the sub-surface region in GaAs due to the loss of stochiometry at the GaAs surface. This doping changes the apparent barrier heights, as well as the interface band diagram. Distinct differences appear between diodes grown on the two sides of the growth window, at 540oC and at 580 oC, with the barrier height changing from 0.92 eV to 0.29 eV.
Deposition of NdBa2Cu3O7-δ Thin Films by Pulsed-Laser Ablation Method: Preliminary Study Togar Saragi; A. Fuad; Darsikin Darsikin; D. Rusdiana; P. Arifin; T. Winata; M. Barmawi
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

Deposition of Nd123 thin films have been successfully produced by the pulsed-laser ablation method. The thin films were deposited at a temperature of 730oC on a MgO(100) substrate with varying oxygen flow, the distance between substrate and target, and the deposition time. The oxygen flow was 50-100 sccm, deposition time was 15 to 60 minutes with the oxygen pressure of 180 mTorr. The deposition films had a dark and shiny appearance with 1.731-11.865 Å in thickness. From the SEM and EDAX measurements, it was shown that the surface morphology has a different homogeneity and different stoichiometric composition.
Triple differential cross-section formulation for two-electron photoionization of the helium metastable (1s2s) 1,3 S states M. Arifin
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

The triple differential cross-section (TDCS) for two-electron photoionization on the helium metastable (1s2s)1,3S states has been formulated. The momentum space formulation of the close-coupling theory was employed to describe nonperturbatively the inelastic scattering in the final state of the atom. To represent the electron-electron correlation in the initial states the multiconfiguration Hartree-Fock method was used. A Laguerre basis (L2) was chosen to expand the target spaces both in the discrete and continuum states. The TDCS as well as the single and double photoionization cross-sections were obtained directly by solving the Lippmann-Schwinger integral equations.
Structure and Photoluminescence of the Ordered Vacancy Compound Cu3In7Se12 Salomo Salomo; Yanuar Yanuar
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

We have synthesized polycrystalline Cu3In7Se12 bulk crystals by the horizontal Bridgman method. The crystal structure of the ordered vacancy compound is investigated by X-ray diffraction and Rietveld refinement analysis. The lattice parameters are a = 5.7616 Å and c = 11.5391 Å and the space group is uniquely specified to be I42m. The photoluminescence spectra are investigated at the liquid helium temperature range in order to determine the defect level of this compound. Photoluminescence spectra of the sample exhibit two transitions at 1.08 eV and 0.95 eV which are identified as donor-acceptor transitions.
Design Study of Modular Lead-Bismuth Cooled Fast Reactors with Nitride Fuel Abu Khalid Rivai; Zaki Su’ud; Ferhat Aziz
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

This paper discusses designs of modular lead-bismuth cooled fast reactors fueled with uranium nitride. The power range of the reactors under study was between 75 MWt and 700MWt. The reactors were designed by optimizing the use of natural uranium blanket and nitride fuel to prolong the fuel cycle. The fuels were enriched uranium nitride which can be used without refueling for 10 years. This study was done on pancake, balance and tall cylindrical types of cores. The results of calculation showed that the maximum excess reactivity in all core designs under study was 0.36 dollar. As for the burnup at EOC, the highest was in the 700 MWt balance core type with 11.95%, and the lowest was at 75MWt pancake core with 2.4% burnups. Capability of burnup in general was quite high. The maximum peak power density obtained was 324 W/cc, i.e. in 700 MWt tall type of core. The peak power densities of these reactores were well below those of the average fast reactors, which were indicative of good safety and controllability of operation.
Proyeksi Kernel GCM pada Sembarang Fungsi Rizal Kurniadi; Marsongkohadi Marsongkohadi; Zaki Su’ud; Triyanta Triyanta
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

The GCM kernel projection on arbitrary function is a technique to solve Schredinger integro-differential equation. The Basic idea is making eigen value equation from Schroedinger equation by projecting the GCM kernel into no orthonormal functions. In this paper the technique is presented to calculate ground state energy of deuteron.
Electrical Conduction in Solid Polymer Electrolytes : A Formula for The Entire Range of Temperatures Mikrajuddin Mikrajuddin
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

The experimentally observed temperature dependence of electrical conduction in polymer electrolytes is normally described with two separated equations: an Arrhenius-type relation for relatively low temperatures and a Vogel-Tamman-Fulcher (VTF)-type relation for relatively high temperatures. A single formula, which is valid for the entire range of temperatures, is developed for describing the temperature dependence of electrical conduction in solid polymer electrolytes.
Struktur Vertikal Gelombang Planeter Di Mesosfer Ekuator Dari Pengamatan MF Radar Pontianak (0.03o LU - 109.3o BT) Dyah RM; Buldan M
Indonesian Journal of Physics Vol 14 No 4 (2003): IJP Vol. 14 No. 4, October 2003
Publisher : Institut Teknologi Bandung

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Abstract

Atmospheric waves play a crucial role in atmospheric dynamics. Mechanism of generating, propagating, and breaking of waves are interesting to study, mainly in equator region, cause results of observation in the mid-latitude indicated equator region as global atmospheric dynamo. Data from Medium Frequency (MF) Radar at Pontianak at the height of 78 – 98 km in 1996 used to obtain vertical structure of variation of planetary waves from zonal and meridional winds in the mesosphere. Generally, intensity of variation of zonal winds higher than meridional. Variation of waves related to sun would be discuss. Variation of planetary waves related to sun over Pontianak didn’t show certain pattern. Results of observation at middle and higher latitude shown certain pattern of variation of planetary waves related to sun.
Band Structure of an Omnidirectional 1D Dielectric Gratings J. Prawiharjo; A.A. Iskandar; M.O. Tjia
Indonesian Journal of Physics Vol 14 No 1 (2003): Vol. 14 No.1, Januari 2003
Publisher : Institut Teknologi Bandung

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Abstract

The one-dimensional Photonic crystal has become an attractive subject of study in view of the recent experimental discovery of its omnidirectional reflectance implying the existence of complete photonic band gaps, which was believed to be possessed only by three-dimensional photonic crystals. This unexpected property has recently been explained numerically. In the present paper, the origin of such property is described and an approximate analytical expression is derived for the band edges of the photonic band gap. The results for some specific structures and materials are demonstrated, showing structures with 0.094% maximum error of the approximated result compared to the complete numerical result.

Page 7 of 34 | Total Record : 334

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