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PENGARUH PENINGKATAN FLOW RATE GAS METAN TERHADAP SIFAT OPTIS LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING Munisa, Lusitra; Saleh, Rosari
Makara Journal of Science Vol. 6, No. 1
Publisher : UI Scholars Hub

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Abstract

Methane Flow Rate Effects On The Optical Properties of Amorphous Silicon Carbon (a-SiC:H) Films Deposited By DC Sputtering Methods. We have investigated the refractive index (n) and the optical absorption coeffi cient (α) from refl ection and transmission measurements on hydrogenated amorphous silicon carbon (a-SiC:H) fi lms. The a-SiC:H fi lms were prepared by dc sputtering method using silicon target in argon and methane gas mixtures. The refractive index (n) decreases as the methane fl ow rate increase. The optical absorption coeffi cient (α) shifts to higher energy with increasing methane fl ow rate. At higher methane fl ow rate, the fi lms tend to be more disorder and have wider optical gap. The relation of the optical properties and the disorder amorphous network with the compositional properties will be discussed.
PENENTUAN KONSTANTA OPTIS DI DAERAH ABSORPSI FUNDAMENTAL MENGGUNAKAN FORMULASI FOROUHI DAN BLOOMER UNTUK LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) Saleh, Rosari; Munisa, Lusitra; Marianty, Dewi
Makara Journal of Science Vol. 6, No. 2
Publisher : UI Scholars Hub

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Abstract

An expression of the imaginary and real parts of the complex refractive index derived by Forouhi and Bloomer have been applied to obtain wider energy range of optical constants for amorphous silicon carbon (a-SiC:H) films deposited by dc sputtering method using silicon and graphite targets. Excellent agreement was obtained between the formula and experimentally measured values of both n(E) and k(E). The optical constants obey Kramers-Kronig dispersion relation and show a maximum at high-energy range. The dependence of five parameters to carbon concentration and the variation of optical constants with composition for both targets will be discussed.
STUDI DISORDER LAPISAN TIPIS AMORF SILIKON KARBON (a-SiC:H) HASIL DEPOSISI METODE DC SPUTTERING Munisa, Lusitra; Saleh, Rosari
Makara Journal of Science Vol. 6, No. 2
Publisher : UI Scholars Hub

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Abstract

Disorder Study of Amorphous Silicon Carbon (a-SiC:H) Films Deposited by DC Sputtering Method. Disorder amorphous network of amorphous silicon carbon (a-SiC:H) films has been investigated for films prepared by dc sputtering method. The films were deposited using silicon target in argon and methane gas mixtures. The optical absorption coefficients have been performed by UV-VIS (ultra violet-visible) reflectance and transmittance spectroscopy. Disorder parameter has been obtained from the optical absorption coefficient α (E) using Tauc plot. Increasing methane flow rate has an effect on increasing Tauc gap and decreasing disorder parameter. The amorphous network of the films tends to be more disorder with increasing methane flow rate. The relation of disorder amorphous network with structural and compositional properties will be discussed.