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All Journal Jurnal Periodic Jurusan Kimia UNP Sainstek Jurnal Riset Kimia Fakultas Pertanian JURNAL PENDIDIKAN TAMBUSAI Sainstek : Jurnal Sains dan Teknologi MASALIQ: Jurnal Pendidikan dan Sains Molekul: Jurnal Ilmiah Kimia Asian Journal of Science, Technology, Engineering, and Art
Hary Sanjaya
Jurusan Kimia, Fakultas Matematika dan Ilmu Pengetahuan Alam Universitas Negeri Padang, Jl. Prof. Dr.Hamka, Padang
Religion Agriculture, Biological Sciences & Forestry Arts Biochemistry, Genetics & Molecular Biology Chemical Engineering, Chemistry & Bioengineering Chemistry Computer Science & IT Education Energy Engineering Materials Science & Nanotechnology Social Sciences Other

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Journal : MASALIQ: Jurnal Pendidikan dan Sains

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Metode Sintesis Nanopartikel-TiO2 : A Review Karlina, Lilis; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 3 No 6 (2023): NOVEMBER
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v3i6.1756

Abstract

Titanium dioxide is an important type of material that has been widely researched by experts. TiO2 can be used as a catalyst and in various other applications because it has unique electronic and optical properties. TiO2 compounds have been synthesized using various synthesis methods. The aim of this review is to summarize various types of TiO2 synthesis methods, morphology and crystallization of nanostructured TiO2. The research method used is literature study or literature study. The results of the reviews show that TiO2 can be synthesized by various methods, namely hydrothermal, solvothermal, sol-gel, direct oxidation, chemical vapor deposition, electrodeposition, sonochemistry and microwaves. The crystal structure phase that is often found is the anatase phase.
Pengaruh DEA dan Waktu Dipping terhadap Nilai Band Gap Lapisan Tipis CuSnO3 Rizka, Futtyhat; Sanjaya, Hary
MASALIQ Vol 3 No 6 (2023): NOVEMBER
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v3i6.2083

Abstract

CuSnO3 is one of the semiconductor materials that can be used in the manufacture of thin film. CuSnO3 is an amorphous semiconductor with a band gap of 2.0-2.5 eV. Dip-coating is one method that can be used to synthesize a thin film of CuSnO3. This study aims to see the effect of DEA additives and dipping time on the band gap value of a thin film of CuSnO3. The results of a thin film of CuSnO3 using the dip-coating method with DEA variations of 1 ml, 1.5 ml, and 2 ml as additives, obtained band gap values of 2.55 eV, 2.41 eV, and 2.31 eV. The larger the volume of DEA, the smaller the band gap value produced. At dipping times of 10 minutes, 15 minutes, and 20 minutes, band gap values of 2.58 eV, 2.31 eV, and 2.26 eV were recorded. The longer the time it takes to dye, the smaller the band gap value produced.
Pengaruh Aditif MEA terhadap Sifat Listrik Lapisan Tipis Sefriyani, Sefriyani; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 4 No 1 (2024): JANUARI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i1.2134

Abstract

This research discusses the effect of adding MEA additives on the synthesis of CuSnO3 thin films using the dipcoating method. This type of research uses experimental.. Based on UV-DRS analysis, the optimum bandgap data was obtained at 1.8034 eV. The addition of additives greatly influenced the reduction of the bandgap. With FPP, a good resistance of 38.59 Ω was obtained at 6x immersion, with a resistivity of 0.000330 Ωm with a conductivity value of 3030.30 Ω-1m-1. From the resulting data it can be concluded that the thicker the layer, the lower the resistance value, and the lower the resistivity, the better the electrical conductivity.
Pengaruh Penambahan Monoetanolamin (MEA) pada Sifat Listrik dari Material Copper Tin Oxide Faizah, Suci Hanim; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 4 No 1 (2024): JANUARI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i1.2506

Abstract

Semiconductors are materials with interesting electrical properties. Copper tin oxide (CuSnO3) is an oxide semiconductor material with a band gap value of 2.0-2.5 eV. The method used is sol-gel method with the addition of monoethanolamine (MEA). Copper (II) nitrate trihydrate and tin (II) chloride dihydrate as precursors and methanol as solvent. The purpose of this research is to see the effect of MEA addition on the electrical properties of CuSnO3. Characterization results using UV-DRS showed the band gap of CuSnO3 obtained with the addition of 1.5 mL of MEA was 1.71 eV and without the addition of MEA was 2.36 eV. The addition of MEA can reduce the band gap value. Electrical conductivity will be better with the smaller band gap value.
Sintesis dan Aplikasi CuSnO3 sebagai Katalis pada Proses Degradasi Zat Warna Methyl Orange dengan Metode Fotolisis Putri, Tiara Jelita; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 4 No 1 (2024): JANUARI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i1.2672

Abstract

Research on the degradation of methyl orange dye using the photolysis method using a copper tin oxide (CuSnO3) catalyst has been carried out. The aim of this research is to see how catalyst activity influences variations in methyl orange degradation time, whether the addition of MEA (Monoethanolamine) is more effective for photocatalyst applications. In this research, a concentration of 10 ppm of methyl orange was used, 40 mL of which was degraded with a CuSnO3 catalyst of 0.05 grams. This degradation process involves treatments including CuSnO3 catalyst without MEA; 1 mL, 1.5 mL, and 2 mL MEA. The characterization used in this research is UV – VIS. The analysis results showed that the percentage of degradation without MEA at a time variation of 240 minutes was 64.43%, while at 1 mL it was 19.77%, 1.5 mL 16.92%, and 2 mL 20.91%.
Pengaruh Perbedaan Suhu Kalsinasi terhadap Band Gap dan Konduktivitas Listrik Lapisan Tipis CuSnO3 Syafrian, Syafrian; Sanjaya, Hary
MASALIQ Vol 4 No 2 (2024): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i2.2751

Abstract

The main semiconductor materials used are the elements Ge (germanium) and Si (silicon). The element Ge is found in nature in small quantities and silicon is the most abundant element in the earth's crust but its conductivity is low. The semiconductor material that has recently been frequently researched is Copper Tin Oxide (CuSnO3). CuSnO3 has high electrical conductivity and is quite abundant on the earth's surface. The synthesized CuSnO3 semiconductor is applied as a thin layer because of several advantages such as large output voltage, small electrode mass, and also a fairly long service life. This research aims to determine the optical and electrical properties of CuSnO3 thin films synthesized using the sol-gel method with dip coating techniques. CuCl2·2H2O, SnCl2·2H2O, methanol, and monoethanolamine (MEA) are the precursors used. The synthesized CuSnO3 thin layer was characterized using a UV-DRS instrument to determine the band gap value and tested using the four point probe method to determine its electrical conductivity. The band gap values with calcination temperatures of 500°C, 550°C, and 600°C are 2.55 eV, 2.83 eV, and 2.95 eV, respectively, with electrical conductivity of 348.46 102 S/cm, 155.48 102 S/cm, and 107.63 102 S/cm. From these data it can be concluded that the band gap value of the CuSnO3 thin layer will increase when the calcination temperature used is higher, and the conductivity decreases as the band gap value of the CuSnO3 thin film increases.
Pengaruh Penambahan Doping Cerium terhadap Nilai Bandgap CuO dengan Metode Sol-Gel Dwiputri, Yumanda; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 2 (2025): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i2.4873

Abstract

Copper(II) oxide (CuO) has been recognized as a promising semiconductor material for various applications, such as photocatalysis, sensors, and renewable energy devices. However, its efficiency is often limited by a suboptimal bandgap value. This study aims to analyze the effect of cerium doping on the properties of CuO nanoparticles synthesized through the sol-gel process. The sol-gel method ensures a homogeneous doping distribution and produces nanoparticles with a stable structure. The bandgap energy of CuO nanoparticles was determined through characterization using UV-DRS. Cerium was introduced as a dopant in CuO at a concentration of 0.4 mmol, resulting in a bandgap value of 1.26 eV, whereas undoped CuO exhibited a bandgap of 1.35 eV. The analysis indicates that the Ce doping concentration significantly affects the bandgap of CuO nanoparticles, with a reduction observed at 0.4 mmol compared to undoped CuO. This decrease is attributed to symmetry disruption caused by doping, including oxygen vacancies, structural defects, and the presence of impurities that create additional energy levels within the bandgap. Furthermore, uniform microstrain and a smaller particle size contribute to structural disturbances that also influence the bandgap.
Pengaruh Penambahan Doping Vanadium terhadap Nanopartikel SnO₂ Menggunakan Metode Sol-Gel Amsyar, Nadhilah; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 2 (2025): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i2.5112

Abstract

Semiconductors are materials used to conduct electricity for a certain period of time. SnO2 is an n-type semiconductor that has a wide band gap and is most widely used in technology such as solar cells, batteries, and catalysts. This study aims to analyze the effect of vanadium doping on the properties of SnO2 nanoparticles using the sol-gel method. The sol-gel method can produce a stable vanadium-doped SnO2 surface and has a high surface area. Determination of the band gap energy value in SnO2 was carried out by characterization using UV-DRS. The results of SnO2 doped with vanadium obtained the optimum bandgap value at the addition of vanadium with a concentration of 0.25 mmol, which is 2.25 eV and SnO2 without the addition of vanadium doping has a bandgap value of 3.41 eV. This shows that the addition of vanadium doping can affect the bandgap value of SnO2 nanoparticles. This decrease in the bandgap value is caused by the interaction between the electron band and the delocalization of electrons in the transition ions causing metal ion substitution, which results in a decrease in the bandgap value.
Pengaruh Konsentrasi Doping TiO₂ dan Volume Diethanolamine (DEA) terhadap Nilai Bandgap CuO dengan Metode Sol-Gel Fatma, Sakina Cahaya; Sanjaya, Hary; Patriela, Miftah
MASALIQ Vol 5 No 4 (2025): JULI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i4.6634

Abstract

Copper(II) oxide (CuO) is a promising semiconductor material for various applications such as photocatalysis, sensing, and renewable energy devices. However, its performance is often limited by a suboptimal bandgap value for efficient energy conversion. This study aims to evaluate the effects of titanium doping concentration and the addition volume of diethanolamine (DEA) on the optical properties of CuO synthesized via the sol-gel method. The sol-gel technique was chosen for its ability to produce uniform doping distribution and stable nanoparticle structures. Bandgap characterization was conducted using UV-DRS spectroscopy. The results show that the bandgap of pure CuO, initially measured at 1.36 eV, was reduced to 1.28 eV through titanium doping at an optimal concentration of 0.3 mmol. The further addition of DEA at an optimal volume of 1 mL lowered the bandgap to 1.22 eV. This reduction indicates that titanium doping and DEA addition significantly influence the optical properties of CuO. These effects are likely due to structural irregularities such as oxygen vacancies, crystal defects, and impurities, which contribute to modifications in the material’s electronic structure. Additionally, the uniform distribution of microstrain and smaller particle size further contribute to structural alterations and bandgap tuning.
Pengaruh Cetyltrimethylammonium Bromide pada Nilai Bandgap Semikonduktor TiO₂-ZnO Rizki, Olga Tiara; Sanjaya, Hary
MASALIQ Vol 5 No 4 (2025): JULI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v5i4.6737

Abstract

This study aims to investigate the effect of adding the surfactant Cetyltrimethylammonium Bromide (CTAB) on the bandgap energy of the TiO₂-ZnO semiconductor material. The material was synthesized using the sol-gel method and characterized by UV-Vis diffuse reflectance spectroscopy (UV-Vis DRS). Variations in CTAB concentration (0.015–0.035 grams) were introduced to evaluate changes in the material’s optical properties. The results show that CTAB addition up to 0.025 grams reduced the bandgap energy from 3.225 eV to 3.004 eV. This decrease is attributed to the formation of structural defects such as oxygen vacancies and reduced particle size, which introduce additional energy states within the bandgap. However, further addition of CTAB beyond 0.025 grams led to an increase in bandgap energy, likely due to particle agglomeration and structural disruptions. These findings indicate that CTAB not only acts as a surfactant but also plays a role in tuning the structure and optical properties of TiO₂-ZnO. Therefore, optimizing CTAB concentration is crucial for enhancing the material's performance in photocatalytic and solar cell applications.
Co-Authors Abdul Razak Admin Alif Agdisti, Nurul Fadilah Agnes Quartina Pudjiastuti Aini, Syamsi Alfarisi, Fadil Amelia, Reza Amsyar, Nadhilah Auzakiyah, Sabella Budhi Oktavia Deski Beri Desy Kurniawati Dwiputri, Yumanda Edi Nasra Eri Barlian Faizah, Suci Hanim Fatma, Sakina Cahaya Filiandini, Nadya Fitria, Fadhila Harahap, Riri Indah Nitami Hardeli Hardeli Hardianti, Amirah Salsabila Hermansyah Aziz Indang Dewata Izanel, Rezi Ananta Jayawarsa, A.A. Ketut Julianti, Sri Rara Julizen, Rofilian Karsa, Dion Randi Khaliq, Feni Kurnia Laksono Trisnantoro Lilis karlina, Lilis Luli, Rahmaneta Miftahul Jannah Miftahurrahmi, Miftahurrahmi Mifthahul Jannah, Nurul Mulia, Melindra Nengsi, Suharti Nizar, Umar Kalmar Novel, Dheo Shalsabilla Novita, Indri Panca Nurul Husna Nurwijayanti Patriela, Miftah Putra, Ananda Putri Permatasari, Putri Putri Rahayu, Nanda Putri, Natasya Alya Putri, Sinta Eka Putri, Tiara Jelita Rahadian Zainul Rahmatika, Aljumaatul Reflia, Tiwi Retno Damayanti Riga, Riga Rindiani, Maiyola Rizka, Futtyhat Rizki, Olga Tiara Rofiatin, Umi Sari, Putri Manda Sefriyani, Sefriyani Septian Budiman Setiowati, Fiqih Sekar Soviah, Sadri Sri Benti Etika Sukma, Vira Ananda Syafrian, Syafrian Syukri Arief Syukri UNP Viony Anjelina Yulfitrianti, Marlina Yunita, Lasmi