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All Journal Jurnal Sains Materi Indonesia Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Jurnal Spektra Indonesian Journal of Physics (IJP)
Pepen Arifin
Kelompok Keilmuan Fisika Material Elektronik, Fakultas Matematika Dan Ilmu Pengetahuan Alam Institut Teknologi Bandung
Astronomy Chemistry Computer Science & IT Earth & Planetary Sciences Electrical & Electronics Engineering Energy Engineering Materials Science & Nanotechnology Mathematics Physics

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Comparison of Triethylarsenic and Trisdimethylaminoarsenic Sources for MOCVD Growth of GaAs Ida Hamidah; Pepen Arifin
Indonesian Journal of Physics Vol 21 No 2 (2010): Vol. 21 No. 2, April 2010
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (252.062 KB) | DOI: 10.5614/itb.ijp.2010.21.2.2

Abstract

Triethylarsine (TEAs) and trisdimethylaminoarsine (TDMAAs) have been widely used as arsenic sources for the growth of GaAs thin films. The comparison of GaAs thin films quality grown by those difference sources are the objective of this study. The method used to growth the GaAs thin films is metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as Ga source. The GaAs thin films were carried out by varying total reactor pressure, growth temperature, and TMGa/TEAs and TMGa/TDMAAs flow rate ratio. The difference quality of GaAs thin films were limited at structure/morphology properties carried out from EDX and SEM characterization. From the characterization it can be concluded that the growth of GaAs thin films with TDMAAs source have better quality than the growth of GaAs thin films with TEAs source. The growth of GaAs thin films with TEAs and TMGa sources revealed that almost all of the grown films have certain high C concentration (around 16 %), with its non-uniform surface morphology. The high C concentration in these films is caused by the CH3 and C2H5 species presence in TMGa and TEAs, respectively, which act as a source of C impurity. The GaAs films grown using TDMAAs and TMGa sources have better characteristics compared to GaAs films grown using TEAS and TMGa sources. The films have good structural with certain low C concentration (around 3 %). The optimum growth condition of GaAs was achieved at the following conditions: the TDMAAs/TMGa flow rate ratio of 4.5, the growth temperature of 580 oC, and the total reactor pressure of 50 torr. In this conditions the grown GaAs thin film has a p-type conductivity with the mobility and the hole concentration of 395 cm2/V.s and 3.44 x 1015 cm-3, respectively, with uniform surface morphology.
Optimalisasi Struktur Sel Surya GaAs Sambungan p-n dengan Lapisan Antirefleksi yang tergandeng dengan Lapisan Window AlGaAs Andi Suhandi; pepen Arifin
Indonesian Journal of Physics Vol 14 No 2 (2003): Vol. 14 No.2, April 2003
Publisher : Institut Teknologi Bandung

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Abstract

Telah dilakukan proses optimalisasi struktur sel surya GaAs sambungan p-n melalui perhitungan secara analitik, dengan variabel perhitungan meliputi makeup divais seperti ketebalan lapisan-lapisan semikonduktor dan konsentrasi doping ketakmurnian, serta parameter parameter divais seperti waktu hidup pembawa muatan minoritas, koefis'en difusi pembawa muatan minoritas, dan laju rekombinasi permukaan. Parameter-parameter divais telah diambil dari data-data hasil eksperimen, hasil simulasi, maupun dari hasil kajian teoretik. Kehadiran lapisan anti refleksi yang tergandeng dengan lapisan window AlGaAs dalam perhitungan ini diwakili dengan nilai transmisivitasnya. Kriteria struktur sel surya optimum ditentukan berdasarkan tingkat pencapaian rapat photocurrent yang optimum.Hasil perhitungan menunjukkan bahwa kehadiran lapisan anti refleksi yang tergandeng dengan lapisan window AIGaAs dapat meningkatkan rapat photocurrent yang dapat dibangkitkan sel surya GaAs secara signifkan. Dibanding dengan bahan lapisan anti refleksi lain, sistem MgFWnS dapat membangkitkan rapat photocurrent paling besar jika dipasang pada sel surya GaAs. Struktur optimum sel surya GaAs terjadi ketika bahan lapisan anti refleksi terbuat dari MgFyZnS, ketebalan lapisan window (AIGaAs) sebesar 20 nm, ketebalan lapisan tipe-p dan tipe-n berturut-turut sekitar 1,5 fan dan 3,5 fan, serta konsentrasi doping akseptor di tipep (N,4) dan konsentrasi doping donor di tipe-n (ND) berturut-turut sekitar 1 x 1018 cm-j, dan 1 x 10" cm-3 . Dengan struktur seperti itu dapat dibangkitkan rapat photocurrent optimum sekitar 46,5 mAlcm2 .
Co-Authors A. Suhandi Agus Subagio Agus Subagio Akhiruddin Maddu Andi Suhandi Andi Suhandi Ari Handono Ramelan Budi Mulyanti Edi Supriyanto Edy Supriyanto Edy Supriyanto Ewa Goldys Fitri Suryani Arsyad Goib Wiranto Harjana Harjana Heri Sutanto Hery Sutanto Horasdia Saragih Ida Hamidah Maman Budiman Maman Budiman Maman Budiman Mersi Kurniati Mikrajuddin Abdullah Moehamad Barmawi Moehamad Barmawi Moehammad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohamad Barmawi Mohammad Barmawi Muhamad Barmawi Mujamilah Mujamilah Mujamilah Mujamilah Mujamilah Mujamilah Ridwan Ridwan Ridwan Ridwan Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Yuyu R. Tayubi Yuyu R. Tayubi