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All Journal Jurnal Sains Materi Indonesia TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Indonesian Journal of Science and Technology ELECTRANS Momentum: Physics Education Journal JITTER (Jurnal Ilmiah Teknologi Informasi Terapan) Jurnal Elektronika dan Telekomunikasi CARADDE: Jurnal Pengabdian Kepada Masyarakat Journal of Educational Research and Evaluation TELEKONTRAN: Jurnal Ilmiah Telekomunikasi, Kendali dan Elektronika Terapan Journal of Vocational Education Studies Industrial Research Workshop and National Seminar Indonesian Journal of Physics (IJP) Wahana Fisika : Jurnal Fisika dan Terapannya
Budi Mulyanti
Universitas Pendidikan Indonesia
Humanities Astronomy Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Environmental Science Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mathematics Mechanical Engineering Physics Public Health Social Sciences Other

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Journal : Jurnal Matematika

 1 
N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD Budi Mulyanti; Agus Subagio; Edi Supriyanto; Heri Sutanto; Fitri Suryani Arsyad; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Abstract

Ferromagnetic semiconductor GaN:Mn thin films were successfully grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was lower than that of MOCVD themal, i.e. in the range of 625-700 °C. Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn. X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not show second phase for film with Mn concentration up to 6.4% at 650 °C of growth temperature. Hall effect measurements show n-type characteristics. The carrier (electron) density tends to decreases and Hall mobility tends to with the increase of Mn concentration is increased. Hysteresis curves observed from VSM measurements indicated that all of the samples are ferromagnetic at room temperature.
Pengaruh Bentuk dan Fluktuasi Ukuran Dot terhadap Pelebaran Garis Spektral Inhomogen pada Quantum Dot Gallium Nitrida (QD GaN) Fitri Suryani Arsyad; Budi Mulyanti; Amiruddin Supu; Moehamad Barmawi
Jurnal Matematika & Sains Vol 12, No 4 (2007)
Publisher : Institut Teknologi Bandung

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Theoretical analysis of the phenomena of the size fluctuation in Gallium Nitride quantum dot (GaN QD) is presented inthis paper. The effect of QD size fluctuation on the electron and hole energy level and the inhomogeneous linebroadening is studied. Analytical expressions for the inhomogeneous line broadening are derived for a Gaussian sizefluctuation distribution. Decreasing in the QD carrier energy level is observed when QD size increases. The peak ofoptical transition energy probability (Emax) is shifted to higher energy when dot size fluctuation (σL) increases. Theoptical transition energy distribution (fE) of cylindrical QD is at the higher energy with the inhomogeneous linebroadening (σE) wider than those of conical, ellipsoidal, as well as semi ellipsoidal QD.
Co-Authors A. Subagio A. Subagio ACHEAMPONG, KENNEDY Ade Gafar Abdullah, Ade Gafar Ade Gaffar Abdulah Adjei, Albert Agus Subagio Ahmad Aminudin Aip Saripudin Ajuni B. Pantjawati Amiruddin Supu Ampimah, Benjamin Chris Andi Suhandi Andrivo Rusydi Apri Wiyono Arjuni B Pantjawati Arjuni Budi Pantjawati Asep Barnas Simanjuntak Ayub Subandi Baiquni, Muhammad Azhar Bambang Trisno Bonsu, Prince Osei- Brian Yuliarto Budi, Agus Heri Setya Chandra Wulandari Dadang Lukman Hakim Dedi Rohendi Edi Supriyanto Eka Pawinanto, Roer Elih Mulyana, Elih Enjang Akhmad Juanda F. S. Arsyad F. S. Arsyad Fauzan, Jahril Nur Febriana, Iqbal Fitri S. Arsyad Fitri S. Arsyad Fitri Suryani Arsyad Henny Henny Heri Sutanto Heru Yuwono Ida Hamidah Ida Hamidah Ida Hamidah Iqbal Febriana Ira Herli Khoeriah Irzaman, Irzaman Jumril Yunas Jumril Yunas, Jumril Kardiawarman Kardiawarman Lia Muliani Lia Muliani Lilik Hasanah Luqmanul Hakim M. Barmawi M. Barmawi M. Barmawi M. Barmawi M. Budiman M. Budiman Maman Budiman Mariya Al Qibtiya Markus Diantoro Moehamad Barmawi Mohamad Barmawi Muhammad Fadli Nasution Mujamilah Mujamilah Nada Sadidah Naftalia Trivenia Simbolon Nurhidayatulloh Nurhidayatulloh Nurhidayatulloh, Nurhidayatulloh Oduro-Okyireh, George Oduro-Okyireh, Theodore P. Arifin P. Arifin P. Arifin P. Susthita Menon Pangestu, M. Assadillah Pepen Arifin Rafi Jatnika Ramdhani Ramdhani Ratna Nurvitasari Rifqi Md Zain, Ahmad Roer Eka Pawinanto, Roer Eka Sahari, Siti Kudnie Sahbudin Shaari Setiawan, Agus Setyo Nugroho, Harbi Silmi At Thahirah Al Azhima Soegianto S Sri Jatno W Sri Jatno W Sugandi, Gandi Sukirno Sukirno Supriyadi, Tata Tommi Hariyadi, Tommi Tommi Haryadi Tommi Haryadi Tuti Suartini U. Hashim Wahyu Sasongko Putro Wawan Purnama Wawan Purnama Widyaningrum Indrasari Wulandari, Chandra Yadi Mulyadi Yuski Maolid Rizki Faozan Yusron Tri Huda Z. Jamal