Article Per Year (5 Year)
p-Index From 2021 - 2026
4.202
P-Index
This Author published in this journals
All Journal Jurnal Periodic Jurusan Kimia UNP Sainstek Jurnal Riset Kimia Fakultas Pertanian JURNAL PENDIDIKAN TAMBUSAI Sainstek : Jurnal Sains dan Teknologi MASALIQ: Jurnal Pendidikan dan Sains Molekul: Jurnal Ilmiah Kimia Asian Journal of Science, Technology, Engineering, and Art
Hary Sanjaya
Jurusan Kimia, Fakultas Matematika dan Ilmu Pengetahuan Alam Universitas Negeri Padang, Jl. Prof. Dr.Hamka, Padang
Religion Agriculture, Biological Sciences & Forestry Arts Biochemistry, Genetics & Molecular Biology Chemical Engineering, Chemistry & Bioengineering Chemistry Computer Science & IT Education Energy Engineering Materials Science & Nanotechnology Social Sciences Other

Published : 39 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 39 Documents
Search

 1   2   3   4 
Pengaruh Penambahan Monoetanolamin (MEA) pada Sifat Listrik dari Material Copper Tin Oxide Faizah, Suci Hanim; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 4 No 1 (2024): JANUARI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i1.2506

Abstract

Semiconductors are materials with interesting electrical properties. Copper tin oxide (CuSnO3) is an oxide semiconductor material with a band gap value of 2.0-2.5 eV. The method used is sol-gel method with the addition of monoethanolamine (MEA). Copper (II) nitrate trihydrate and tin (II) chloride dihydrate as precursors and methanol as solvent. The purpose of this research is to see the effect of MEA addition on the electrical properties of CuSnO3. Characterization results using UV-DRS showed the band gap of CuSnO3 obtained with the addition of 1.5 mL of MEA was 1.71 eV and without the addition of MEA was 2.36 eV. The addition of MEA can reduce the band gap value. Electrical conductivity will be better with the smaller band gap value.
Sintesis dan Aplikasi CuSnO3 sebagai Katalis pada Proses Degradasi Zat Warna Methyl Orange dengan Metode Fotolisis Putri, Tiara Jelita; Sanjaya, Hary; Budiman, Septian
MASALIQ Vol 4 No 1 (2024): JANUARI
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i1.2672

Abstract

Research on the degradation of methyl orange dye using the photolysis method using a copper tin oxide (CuSnO3) catalyst has been carried out. The aim of this research is to see how catalyst activity influences variations in methyl orange degradation time, whether the addition of MEA (Monoethanolamine) is more effective for photocatalyst applications. In this research, a concentration of 10 ppm of methyl orange was used, 40 mL of which was degraded with a CuSnO3 catalyst of 0.05 grams. This degradation process involves treatments including CuSnO3 catalyst without MEA; 1 mL, 1.5 mL, and 2 mL MEA. The characterization used in this research is UV – VIS. The analysis results showed that the percentage of degradation without MEA at a time variation of 240 minutes was 64.43%, while at 1 mL it was 19.77%, 1.5 mL 16.92%, and 2 mL 20.91%.
Pengaruh Perbedaan Suhu Kalsinasi terhadap Band Gap dan Konduktivitas Listrik Lapisan Tipis CuSnO3 Syafrian, Syafrian; Sanjaya, Hary
MASALIQ Vol 4 No 2 (2024): MARET
Publisher : Lembaga Yasin AlSys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/masaliq.v4i2.2751

Abstract

The main semiconductor materials used are the elements Ge (germanium) and Si (silicon). The element Ge is found in nature in small quantities and silicon is the most abundant element in the earth's crust but its conductivity is low. The semiconductor material that has recently been frequently researched is Copper Tin Oxide (CuSnO3). CuSnO3 has high electrical conductivity and is quite abundant on the earth's surface. The synthesized CuSnO3 semiconductor is applied as a thin layer because of several advantages such as large output voltage, small electrode mass, and also a fairly long service life. This research aims to determine the optical and electrical properties of CuSnO3 thin films synthesized using the sol-gel method with dip coating techniques. CuCl2·2H2O, SnCl2·2H2O, methanol, and monoethanolamine (MEA) are the precursors used. The synthesized CuSnO3 thin layer was characterized using a UV-DRS instrument to determine the band gap value and tested using the four point probe method to determine its electrical conductivity. The band gap values with calcination temperatures of 500°C, 550°C, and 600°C are 2.55 eV, 2.83 eV, and 2.95 eV, respectively, with electrical conductivity of 348.46 102 S/cm, 155.48 102 S/cm, and 107.63 102 S/cm. From these data it can be concluded that the band gap value of the CuSnO3 thin layer will increase when the calcination temperature used is higher, and the conductivity decreases as the band gap value of the CuSnO3 thin film increases.
Efek Penambahan Diethanolamine dan Suhu Kalsinasi terhadap Energi Gap Lapisan Tipis CuSnO3 Sukma, Vira Ananda; Sanjaya, Hary
Asian Journal of Science, Technology, Engineering, and Art Vol 1 No 2 (2023): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v1i2.2045

Abstract

This study focuses on the synthesis of CuSnO3 thin films using the sol-gel dip coating method, with a particular emphasis on the effects of diethanolamine (DEA) addition and calcination temperature on the bandgap energy. The successful addition of DEA significantly influenced the reduction of the bandgap energy of CuSnO3 thin films, decreasing from 3.21 eV (without DEA) to 2.11 eV (optimal DEA addition, 1.5 mL), as characterized by UV-DRS. Furthermore, different calcination temperatures yielded varying bandgap energies, with the lowest bandgap energy observed in samples calcined at 550°C. This research provides valuable insights into the manipulation of CuSnO3 thin film properties for potential applications in optoelectronic devices and other emerging technologies.
Pengaruh Aditif Monoethanolamine (MEA) terhadap Struktur Kristal Copper Tin Oxide Yulfitrianti, Marlina; Sanjaya, Hary; Budiman, Septian
Asian Journal of Science, Technology, Engineering, and Art Vol 1 No 2 (2023): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v1i2.2046

Abstract

Solar cell technology is a technology that can create electrical energy using semiconductor devices that have p-n connections. Copper tin oxide CuSnO3 (CSO) is an amorphous oxide semiconductor with a band gap of 2.0–2.5 eV. The method used is sol gel with the addition of one of the commonly used additives, namely Monoethanolamine (MEA). This research aims to determine the effect of monoethanolamine additives on the crystal structure of Copper Tin Oxide using the Sol Gel method. This research is quantitative research by collecting data from previous research and then conducting research using specified methods and objects. The results of research using XRD showed particle sizes ranging from 40.10 – 50.02 nm and the results obtained without additives were 21.06 nm. This is because the addition of additives greatly influences the crystal size and crystal Structure.
Pengaruh Variasi Monoethanolamine dan Jumlah Pelapisan terhadap Band Gap Lapis Tipis CuSnO3 Nengsi, Suharti; Sanjaya, Hary
Asian Journal of Science, Technology, Engineering, and Art Vol 1 No 2 (2023): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v1i2.2047

Abstract

This study investigated a thin layer of CuSnO3 synthesized through sol-gel dip-coating method with variations in the addition of monoethanolamine. The results revealed that the addition of monoethanolamine by 1 ml reduced the band gap value to 2.2 eV, while the thin layer without the addition of monoethanolamine had a band gap value of 3.1 eV. In addition, the variation in the number of coatings also affects the band gap, where a maximum value of 2.1 eV is obtained with 2 times of coating. These results highlight the importance of monoethanolamine addition and coating amount in regulating the optical properties of CuSnO3 thin layers. The large amount of coating causes an increase in the band gap value and the addition of Monoethanolamine affects the CuSnO3 band gap value.
Pengaruh Penambahan Aditif Diethanolamine (DEA) pada Ukuran Kristal Semikonduktor Copper Tin Oxide (CuSnO3) dengan Metode Sol-Gel Karlina, Lilis; Sanjaya, Hary
Asian Journal of Science, Technology, Engineering, and Art Vol 1 No 2 (2023): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v1i2.2064

Abstract

This research involves the synthesis of Copper Tin Oxide (CuSnO3) using the sol-gel method. The synthesized CuSnO3 was characterized by X-Ray Difraction (XRD) to obtain the crystal size using the Debye-Scherrer equation. The crystal sizes obtained by adding 0 mL DEA and 2 mL DEA were 21.05 nm and 47.9 nm. There was an increase in crystal size with increasing DEA additive volume.
Pengaruh Konsentrasi Perkursor terhadap Sifat Listrik dari Lapisan Tipis Rindiani, Maiyola; Sanjaya, Hary; Budiman, Septian
Asian Journal of Science, Technology, Engineering, and Art Vol 1 No 2 (2023): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v1i2.2068

Abstract

A thin layer is a layer made from organic or non-organic materials which are semiconductors, conductors and insulators. This research aims to determine the effect of precursor concentration on the electrical properties of thin films. Variations in precursor concentration used were 0.025 M, 0.05 M, and 0.075 M. CuSnO3 thin films were characterized by UV-DRS, XRD, FPP, and SEM. The method used in this research is sol-gel. The sol-gel process is used because of its ability to control the surface properties of oxide composites. The results of the band-gap test the variation in precursor concentration obtained by the band-gap value becomes smaller with increasing concentration. The lowest band-gap value in variations in adding an MEA volume of 2 ml, the optimum band-gap value is 2.1706 eV. The results of the FPP test on a thin layer of CuSnO3 precursor concentration of 0.05 M with an optimum MEA of 2 ml obtained a resistivity value of 0.0005671 Ωm with a conductivity value of 173.5809 Ω^(-1) m^(-1).
Effectiveness of Diethanolamine (DEA) Addition on Band Gap Value of SnO2 by Using Sol-Gel Methods Patriela, Miftah; Sanjaya, Hary
Asian Journal of Science, Technology, Engineering, and Art Vol 2 No 2 (2024): Asian Journal of Science, Technology, Engineering, and Art
Publisher : Darul Yasin Al Sys

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.58578/ajstea.v2i2.2743

Abstract

The need for electrical energy is increasing with the increase in the economy and population in Indonesia. Fossil energy sources are used as fuel to produce electrical energy and will run out if used continuously. Fossil energy sources can be replaced by using New Renewable Energy (NRE) to meet national electrical energy needs. The purpose of adding additives in this study is to observe the effectiveness of the addition of DEA on the band gap value, crystal phase, and surface morphology on SnO2. In this study using the sol-gel method for the synthesis of SnO2. The sol-gel method is the conversion of monomers into colloidal solutions (sol) which serve as precursors for integrated networks (gels) either discrete particles or network polymers. SnO2 nanomaterials will be characterized by UV-DRS Spectrophotometer. The results of characterization of SnO2 nanomaterials with the addition of Diethanolamine additives as much as 1.5 mL have obtained a band gap value of 3.60 eV.
Pengaruh Penambahan Zat Aditif Dea (Diethanolamine) dan Jumlah Pelapisan Spin-Coating Terhadap Nilai Band Gap Lapisan Tipis CuSnO₃ Filiandini, Nadya; Sanjaya, Hary
Jurnal Pendidikan Tambusai Vol. 9 No. 1 (2025)
Publisher : LPPM Universitas Pahlawan Tuanku Tambusai, Riau, Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31004/jptam.v9i1.26512

Abstract

Penelitian ini bertujuan untuk mengetahui pengaruh penambahan zat aditif diethanolamine (DEA) dan jumlah pelapisan menggunakan metode spin-coating terhadap nilai band gap lapisan tipis CuSnO₃. Material CuSnO₃ dipilih karena bersifat semikonduktor dengan potensi tinggi untuk digunakan dalam aplikasi elektronik dan energi terbarukan. Sintesis dilakukan dengan mencampurkan Cu(NO₃)₂ dan Sn(NO₃)₄ dalam pelarut metanol dengan penambahan DEA pada variasi volume 1,0 mL, 1,5 mL, dan 2,0 mL. Proses spin-coating dilakukan pada substrat kaca dengan kecepatan 2000 rpm selama 60 detik, kemudian dilakukan pelapisan sebanyak 1, 3, dan 5 kali. Sampel dikeringkan dalam oven pada suhu 110 °C selama 15 menit dan dikalsinasi pada suhu 550 °C selama 2 jam. Karakterisasi dilakukan menggunakan UV-Vis DRS untuk mengukur nilai band gap. Hasil penelitian menunjukkan bahwa penambahan DEA menyebabkan penurunan nilai band gap dari 3.0089 eV menjadi 2.9161 eV. Selain itu, penambahan jumlah pelapisan hingga 5 kali menghasilkan nilai band gap terendah yaitu 2.0203 eV. Penurunan nilai band gap menunjukkan peningkatan potensi konduktivitas material, sehingga CuSnO₃ dengan penambahan DEA dan jumlah pelapisan yang tepat dapat digunakan sebagai material semikonduktor alternatif yang efisien.
Co-Authors Abdul Razak Admin Alif Agdisti, Nurul Fadilah Agnes Quartina Pudjiastuti Aini, Syamsi Alfarisi, Fadil Amelia, Reza Auzakiyah, Sabella Budhi Oktavia Deski Beri Desy Kurniawati Edi Nasra Eri Barlian Faizah, Suci Hanim Filiandini, Nadya Fitria, Fadhila Harahap, Riri Indah Nitami Hardeli Hardeli Hardianti, Amirah Salsabila Hermansyah Aziz Indang Dewata Izanel, Rezi Ananta Jayawarsa, A.A. Ketut Julizen, Rofilian Karsa, Dion Randi Khaliq, Feni Kurnia Laksono Trisnantoro Lilis karlina, Lilis Luli, Rahmaneta Miftahul Jannah Miftahurrahmi, Miftahurrahmi Mifthahul Jannah, Nurul Mulia, Melindra Nengsi, Suharti Nizar, Umar Kalmar Novel, Dheo Shalsabilla Novita, Indri Panca Nurul Husna Nurwijayanti Patriela, Miftah Putra, Ananda Putri Permatasari, Putri Putri Rahayu, Nanda Putri, Natasya Alya Putri, Sinta Eka Putri, Tiara Jelita Rahadian Zainul Rahmatika, Aljumaatul Reflia, Tiwi Retno Damayanti Riga, Riga Rindiani, Maiyola Rizka, Futtyhat Rofiatin, Umi Sari, Putri Manda Sefriyani, Sefriyani Septian Budiman Setiowati, Fiqih Sekar Soviah, Sadri Sri Benti Etika Sukma, Vira Ananda Syafrian, Syafrian Syukri Arief Syukri UNP Viony Anjelina Yulfitrianti, Marlina Yunita, Lasmi