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All Journal Jurnal Ilmu Dasar Jurnal Sains Materi Indonesia Elkom: Jurnal Elektronika dan Komputer Jurnal Matematika & Sains UNEJ e-Proceeding Jurnal Informatika dan Rekayasa Perangkat Lunak Indonesian Review of Physics (IRiP) Jurnal Ilmiah Agribios Jurnal Program Kemitraan dan Pengabdian Kepada Masyarakat Duta Abdimas: Jurnal Pengabdian Masyarakat Jurnal Informatika Polinema (JIP) Yure Humano Fundamentum: Jurnal Pengabdian Multidisiplin
Edy Supriyanto
Jurusan Fisika, Fakultas Matematika Dan Ilmu Pengetahuan Alam, Universitas Jember
Agriculture, Biological Sciences & Forestry Humanities Astronomy Computer Science & IT Control & Systems Engineering Decision Sciences, Operations Research & Management Earth & Planetary Sciences Economics, Econometrics & Finance Education Electrical & Electronics Engineering Environmental Science Law, Crime, Criminology & Criminal Justice Library & Information Science Materials Science & Nanotechnology Mathematics Public Health Social Sciences Other

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Journal : UNEJ e-Proceeding

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Simulation of Solar Cell Diode I-V Characteristics Using Finite Element Methode: Influence of p- Layer Thickness Greta Andika Fatma; Endhah Purwandari; Edy Supriyanto
UNEJ e-Proceeding 2016: Proceeding The 1st International Basic Science Conference
Publisher : UPT Penerbitan Universitas Jember

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Abstract

Characteristic of I-V is a key parameter of describing the performance of solar cell diode, specially for Silicon material. One of the effort to get its higher performance can be conducted by investigating the effect of the thickness of p-layer. The thickness becomes important factor because of its function as windows layer, which will determine the number of generation factor, appropiate to the charge carrier producing. Here, we explore them by using computer program, applying finite element methode as the numerical simulation. The geometry of the diode was simulated in one dimensional structure, where the thickness of p-layer varied from 0,7 μm to 1,5 μm, while the n-layer was fixed at a thickness of 3,5 μm. The result showed that the optimum parameters has come out to achieve the best performance of this type of solar cell.
Simulation of I-V Characteristics of Si Diode at Difference Operating Temperature:Effect of Ionized Impurity Scattering Siti Lailatul Arofah; Endhah Purwandari; Edy Supriyanto
UNEJ e-Proceeding 2016: Proceeding The 1st International Basic Science Conference
Publisher : UPT Penerbitan Universitas Jember

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Abstract

The usage quality of Si Diode was influenced by the operating temperature. The increment of temperature caused the increased number of ionized impurities. Coulomb interaction between the impurities and the local charge carrier caused the scattering on the impurity. Furthermore, this scattering causes changes in the velocity and mobility of charge carriers. This gives an effect on the distribution of charge carriers, causing changes in the diffusion current density. In this paper, we perform the I-V characteristic of Si diode, simulated in two dimensional structure. Several temperatures (200K-473K) and also the charge carrier mobility were observed as the input parameter of the equation modelled. The simulation results show that the value of current density diffusion of Si Diodes was maximum at temperature of 200K and decreasing at a higher temperature of 473K.
Co-Authors Agus Subagio Agus Subagio Ahmadi Ahmadi Ari Dwi Nugraheni Aryo Fajar Sunartomo Ashanal Holikin AWALUDDIN, CANDRA KITSI Dimas Adi Prayogo Dwi Pangga Dwi Sabda Budi Prasetya Edy Wihardjo Eka Ardhianto Eko Nur Wahyudi Elyda Akhya Afida Misrohmasari Endang Lestariningsih Endhah Purwandari Goib Wiranto Greta Andika Fatma Habibi Habibi Hari Murti Harsojo Harsojo Heri Sutanto Hery Sutanto Horasdia Saragih Ina Heliany Kusumayanti, Dina Dyah Maman Budiman Maman Budiman Maman Budiman Mardi Siswo Utomo Mikrajuddin Abdullah Mochamad Edoward Ramadhan Moehamad Barmawi Moehammad Barmawi Mohamad Barmawi Mohamad Barmawi Muhammad Iqbal Mujamilah Mujamilah Pepen Arifin Pepen Arifin Pepen Arifin Pepen Arifin R. Soelistijadi Rara Redjeki Rara Sri Artati Redjeki Siti Lailatul Arofah Subekti, Sri Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sutrisno Sutrisno Suwardiyanto Suwardiyanto Widiyanto Handoko Widiyanto Tri Handoko