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All Journal Jurnal Sains Materi Indonesia TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Indonesian Journal of Science and Technology ELECTRANS Momentum: Physics Education Journal JITTER (Jurnal Ilmiah Teknologi Informasi Terapan) Jurnal Elektronika dan Telekomunikasi CARADDE: Jurnal Pengabdian Kepada Masyarakat Journal of Educational Research and Evaluation TELEKONTRAN: Jurnal Ilmiah Telekomunikasi, Kendali dan Elektronika Terapan Journal of Vocational Education Studies Industrial Research Workshop and National Seminar Indonesian Journal of Physics (IJP) Wahana Fisika : Jurnal Fisika dan Terapannya
Budi Mulyanti
Universitas Pendidikan Indonesia
Humanities Astronomy Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Environmental Science Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mathematics Mechanical Engineering Physics Public Health Social Sciences Other

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Journal : Indonesian Journal of Physics (IJP)

 1 
Simulasi Reaktor MOCVD Dengan Menggunakan FEMLAB Budi Mulyanti; Fitri S. Arsyad; Soegianto S; M. Barmawi; Sri Jatno W
Indonesian Journal of Physics Vol 13 No 2 (2002): Vol. 13 No.2, April 2002
Publisher : Institut Teknologi Bandung

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Abstract

Numerical simulation is presented in order to have optimal growth parameters when thin film GaN is grown in the MOCVD reactor. The simulation is performed by changing the growth parameters such as diffusivities and flow rates of gases, and the reactor’s geometries. Gases that are used in this simulation are trimethyl gallium (TMGa) and ammonia (NH3) as source gases and nitrogen (N2) as a carrier gas. The uniform thin film is obtained from this simulation, when the growth parameters are 0.1 m2s-1, 10-3ms-1, and 3.5 cm for gas diffusivity, gas flow rate and distance between reactor neck and substrate, respectively.
Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation Budi Mulyanti; Fitri S. Arsyad; P. Arifin; M. Budiman; Sri Jatno W; M. Barmawi
Indonesian Journal of Physics Vol 15 No 3 (2004): Vol. 15 No. 3, July 2004
Publisher : Institut Teknologi Bandung

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Abstract

Growth of Ga1-xMnxN thin film in the vertical MOCVD (Metal Organic Chemical Vapor Depositions) reactor as a function of substrate temperature is analyzed by numerical simulation. Gases that are used as a source of Ga, N and Mn are trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc), respectively. Hydrogen (H2) is used as a carrier gas for both TMGa and CpMnTc. The objective of simulation is to obtain an optimal growth parameter, in which the growth rate is high and uniform. From the simulation results, it can be concluded that to achieve a highest growth rate, the substrate temperature should be maintained at about 1173 K and with this temperature the growth rate is nearly constant when the susceptor radial distance is between 3.5 cm and 4.5 cm.
Co-Authors A. Subagio A. Subagio ACHEAMPONG, KENNEDY Ade Gafar Abdullah, Ade Gafar Ade Gaffar Abdulah Adjei, Albert Agus Subagio Ahmad Aminudin Aip Saripudin Ajuni B. Pantjawati Amiruddin Supu Ampimah, Benjamin Chris Andi Suhandi Andrivo Rusydi Apri Wiyono Arjuni B Pantjawati Arjuni Budi Pantjawati Asep Barnas Simanjuntak Ayub Subandi Baiquni, Muhammad Azhar Bambang Trisno Bonsu, Prince Osei- Brian Yuliarto Budi, Agus Heri Setya Chandra Wulandari Dadang Lukman Hakim Dedi Rohendi Edi Supriyanto Eka Pawinanto, Roer Elih Mulyana, Elih Enjang Akhmad Juanda F. S. Arsyad F. S. Arsyad Fauzan, Jahril Nur Febriana, Iqbal Fitri S. Arsyad Fitri S. Arsyad Fitri Suryani Arsyad Henny Henny Heri Sutanto Heru Yuwono Ida Hamidah Ida Hamidah Ida Hamidah Iqbal Febriana Ira Herli Khoeriah Irzaman, Irzaman Jumril Yunas Jumril Yunas, Jumril Kardiawarman Kardiawarman Lia Muliani Lia Muliani Lilik Hasanah Luqmanul Hakim M. Barmawi M. Barmawi M. Barmawi M. Barmawi M. Budiman M. Budiman Maman Budiman Mariya Al Qibtiya Markus Diantoro Moehamad Barmawi Mohamad Barmawi Muhammad Fadli Nasution Mujamilah Mujamilah Nada Sadidah Naftalia Trivenia Simbolon Nurhidayatulloh Nurhidayatulloh Nurhidayatulloh, Nurhidayatulloh Oduro-Okyireh, George Oduro-Okyireh, Theodore P. Arifin P. Arifin P. Arifin P. Susthita Menon Pangestu, M. Assadillah Pepen Arifin Rafi Jatnika Ramdhani Ramdhani Ratna Nurvitasari Rifqi Md Zain, Ahmad Roer Eka Pawinanto, Roer Eka Sahari, Siti Kudnie Sahbudin Shaari Setiawan, Agus Setyo Nugroho, Harbi Silmi At Thahirah Al Azhima Soegianto S Sri Jatno W Sri Jatno W Sugandi, Gandi Sukirno Sukirno Supriyadi, Tata Tommi Hariyadi, Tommi Tommi Haryadi Tommi Haryadi Tuti Suartini U. Hashim Wahyu Sasongko Putro Wawan Purnama Wawan Purnama Widyaningrum Indrasari Wulandari, Chandra Yadi Mulyadi Yuski Maolid Rizki Faozan Yusron Tri Huda Z. Jamal