Article Per Year (5 Year)
p-Index From 2021 - 2026
6.079
P-Index
This Author published in this journals
All Journal Reaktor International Journal of Renewable Energy Development TEKNIK Rotasi METANA BERKALA FISIKA JURNAL KIMIA SAINS DAN APLIKASI JURNAL TEKNOLOGI KIMIA DAN INDUSTRI Analisis: Jurnal Studi Keislaman Geoplanning : Journal of Geomatics and Planning Jurnal Riset Pendidikan Matematika Bulletin of Chemical Reaction Engineering & Catalysis Jurnal Riset Industri Mesin JUPE : Jurnal Pendidikan Mandala Universitas Muhammadiyah Yogyakarta Undergraduate Conference Proceeding Jurnal Sosial dan Sains International Journal of Renewable Energy Development Bulletin of Chemical Reaction Engineering & Catalysis Journal of Chemical Engineering Research Progress JURNAL REKAYASA KIMIA & LINGKUNGAN
I. Istadi
Department Of Chemical Engineering, Diponegoro University, Jl. Prof. Soedarto, Kampus UNDIP Tembalang, Semarang 50239
Agriculture, Biological Sciences & Forestry Astronomy Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Decision Sciences, Operations Research & Management Earth & Planetary Sciences Economics, Econometrics & Finance Education Electrical & Electronics Engineering Energy Engineering Environmental Science Industrial & Manufacturing Engineering Law, Crime, Criminology & Criminal Justice Library & Information Science Materials Science & Nanotechnology Mathematics Mechanical Engineering Physics Public Health Social Sciences

Published : 76 Documents Claim Missing Document
Claim Missing Document
Check
Articles

Found 2 Documents
Search
Journal : BERKALA FISIKA

 1 
Pengaruh Laju Molar Mn Larutan Terhadap Mikrostruktur Lapisan Tipis GaN:Mn yang Dideposisi di atas Substrat Si Menggunakan Metode Sol-Gel Sutanto, Heri; Hidayanto, Eko; Nurhasanah, Iis; Istadi, Istadi
BERKALA FISIKA Vol 14, No 2 (2011): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (306.984 KB)

Abstract

A thin layer of material deposition of GaN: Mn by sol-gel method has done using spin-coating technique. Solution of gallium-citrate-amine maganese-Ga2O3 synthesized using as a source of Ga and Mn MnO2 as the source. Solution varied with the mole fraction solution of 60-80% Mn. Brown crystals that formed subsequently dissolved in ethylenediamine to form a gel. Subsequent gel superimposed on top of Si substrates with a spin-coater at a rate of 1100 rpm. Layers formed at temperatures of 900oC and then disintering in UHP N 2 gas environment to form the decomposition of GaN: Mn. The results of spectral analysis of energy dispersive X-ray (EDX) showed incorporation of Mn into the GaN mole fraction increased with the addition of a solution of Mn in the solution used. EDX Test results show that thin films of GaN: Mn impurity contained carbon (C) up to 36.71%. Image scanning electron microscopy (SEM) a thin layer of GaN: Mn shows in general have been obtained surface roughness (rms) morphology of the layer reaches the order of nanometers up to 24.36 nm. From the results already obtained show that the sol-gel deposition method has been able to produce a thin layer of magnetic semiconductors with a nearly homogeneous surface morphology. Thus the sol-gel method could be developed for alternative methods of deposition of thin layers that are economical and simple. Key words: GaN: Mn, CSD, Thin Layer, Mn incorporation.
Mikrostruktur Semikonduktor GaN di Atas Substrat Silikon Dengan Metode Sol-Gel Sutanto, Heri; Nurhasanah, Iis; Istadi, Istadi; Maryanto, Maryanto; Ambikawati, Wahyu; Marlini, Nofi
BERKALA FISIKA Vol 13, No 2 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1874.942 KB)

Abstract

Gallium nitride (GaN) semiconductor thin films have been successfully deposited on Si substrate (004) by sol-gel method. Gel prepared from the crystal gallium-citrate-amines. These crystals formed from a solution containing the ions Ga+3 and citric acid (CA). Gel in place on the substrate and then rotated with a speed of 1100 rpm. The gel layers are obtained and then placed on the programmable furnace. Deposition temperature varied of 800, 900 and 1000oC in a nitrogen gas environment during 2 hour. The crystal quality of GaN thin films have characterized by XRD measurement. The surface morphology and cross section of the films observed by SEM. The film compositions determined by EDX characterization. The results showed that all the GaN thin films on silicon substrate have oriented polycrystalline structure. The crystal quality of GaN film is formed is influenced by the deposition temperature. In a deposition temperature range is used, increasing the deposition temperature can improve the crystal quality of GaN films.   Keywords: GaN Thin Films; Spin-Coating Technique; Silicon Substrate
Co-Authors Afriadie, Chandra Ajeng Riswanti Wulandari Alqurni, Wais Amalia, Rahma Amin N.A.S. Amin Amin Nugroho Aminuyati Anggun Kurniawan Anindita Indriana Aniyati Khoiriyah Anwar Muttaqien, Anwar Anwaruddin Hisyam Anwaruddin Hisyam Ardian D. Yudhistira Ardian Dwi Yudhistira Aribowo, Windarto Astri Rakhmawati Atanasius Priharyoto Bayuseno Bahrudin, Moh. Bambang Pramudono Bambang Tri Nugroho Bintang Ayu Kalimantini Chusnul Khotimah D. A. Rahmawati D. Intaningrum Daniel Setiyo Nugroho Daniel Setiyo Nugroho, Daniel Setiyo Dian Rahmayanti Didi D. Anggoro Didi D. Anggoro Didi D. Anggoro Didi D. Anggoro Didi Dwi Anggoro Dinara, Daniella Cipta Dini Wulandari Dorothy Hoo Wei Ling Dyah Hesti Wardhani Eko Hidayanto Fachmy Adji Pangestu Setiawan Fajar Astuti Febriansyar, Rosyad Adrian Haniif Prasetiawan Heri Mulyanti Heri Sutanto Herlina Hidayati Iis Nurhasanah Inshani Utami Inshani Utami Karimullah, Suud Sarim Kursius, Catherine M. Kursius, Catherine Mentaya Luqman Buchori M.C.T. Wahyu Utami Maryanto - Muhamad, Theobroma Guntur Nani Harihastuti, Nani New Pei Yee Nofi Marlini Nor Aishah Saidina Amin Nor Aishah Saidina Amin Nor Aishah Saidina Amin P Purwanto Pakpahan, Agnes J. Pakpahan, Andre W. S. Permatasari, Astrid Eka Pratiwi, A. Andini Radisya Purwanto . Purwanto Purwanto Purwanto Purwanto Putut Marwoto Qotrunnada, Novaya Aulia Rahmat Gernowo Ratna Dewi Kusumaningtyas Riyanto, Teguh Roikhatus Solikhah Roikhatus Solikhah Salsabila, Unik Hanifah Salsabilla, Alda Saputra, Roni Ade Sitompul, J. P Slamet Priyanto Suherman Suherman Sulistyo Sulistyo Teguh Riyanto Teuku Irfan Maulana Udin Mabruro Wahyu Ambikawati Wulandari, Ajeng Riswanti