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All Journal J-Sil (Jurnal Teknik Sipil dan Lingkungan) BERKALA FISIKA Jurnal Ilmu Dasar POSITRON Jurnal Penelitian Fisika dan Aplikasinya (JPFA) Jurnal Sains Materi Indonesia Jurnal Sains dan Teknologi Nuklir Indonesia (Indonesian Journal of Nuclear Science and Technology) TELKOMNIKA (Telecommunication Computing Electronics and Control) Jurnal Pendidikan Fisika Indonesia Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Journal of Engineering and Technological Sciences Phi : Jurnal Pendidikan Fisika dan Terapan Widyariset Science and Technology Indonesia Indonesian Journal of Chemistry Jurnal Otomasi Kontrol dan Instrumentasi WIDYA LAKSANA Jurnal Teori dan Aplikasi Fisika Indonesian Journal of Electrical Engineering and Computer Science Widyariset Journal of Multidisciplinary Applied Natural Science JURNAL LENTERA AKUNTANSI at-Tarbiyah al-Mustamirrah: Jurnal Pendidikan Islam Pharmaceutical Sciences and Research (PSR) Makara Journal of Science Indonesian Journal of Physics (IJP) at-Tarbiyah al-Mustamirrah: Jurnal Pendidikan Islam Jurnal Pengabdian Sosial Greensusmater
Khairurrijal Khairurrijal
Department Of Physics, Faculty Of Mathematics And Natural Sciences, Institut Teknologi Bandung,
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Journal : telkomnika telecommunication computing electronics and control

 1 
A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices Endah Rahmawati; Riska Ekawita; Maman Budiman; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 10, No 4: December 2012
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v10i4.862

Abstract

Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source. Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved.
Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Fatimah A. Noor; Ferry Iskandar; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 10, No 3: September 2012
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v10i3.826

Abstract

In this paper, we have developed a model of the tunneling current through a high- dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the equivalent oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.
Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Fatimah A. Noor; Ferry Iskandar; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
TELKOMNIKA (Telecommunication Computing Electronics and Control) Vol 10, No 3: September 2012
Publisher : Universitas Ahmad Dahlan

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.12928/telkomnika.v10i3.826

Abstract

In this paper, we have developed a model of the tunneling current through a high- dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the equivalent oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents.
Co-Authors A. Suhendi A. Y. Nuryantini A.A. Ketut Agung Cahyawan W Aan Priyanto Ade Yeti Nuryantini Adhha, Nurul Adi Bagus Suryamas Adi Bagus Suryamas Adi Bagus Suryamas Afifah Rosyidah Agus Riyanto Ahmad Aminudin Ahmad Fahmi Alan Maulana Alan Maulana Ali Jusri Pohan Alvian Hayu Sudibya Alyah R, A. Fadilah Ambran Hartono Andika Putra Anrokhi, Mohamad Samsul Aramel, Aramel Arif Surachman Aris Priatama Aris Priatama Asti Sawitri Astuti Astuti Aunuddin Syabba Azzahra, Asya Azzahwa, Taufik Bambang Ariwahjoedi Bambang Ariwahjoedi Bebeh Wahid Nuryadin Bimastyaji Surya Ramadan Cuk Imawan Darsikin Darsikin Dayu Apoji Deddy Kurniadi Dhewa Edikresnha Dian Ahmad Hapidin Djulia Onggo Edi Sanjaya Edi Wibowo Edy Wibowo Eka Sentia Ayu Listari Ekawita, Riska Elfahmi Elfahmi, Elfahmi Elvina Ayu Ratnasari Endah Rahmawati Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah Arofiati Noor Fatimah Arofiati Noor Fauzi Ahmad Bogas Ferry Iskandar Freddy Haryanto Freddy Haryanto Fuji Hernawati Kusumah Fuji Pratami H Mahfudz Hasbullah Nawir, Hasbullah Hasibuan, Maryam Hasim Hermawan K. Dipojono Hernawan Mahfudz Heru Susanto Hutapea, Alfon Hutwan Syarifuddin Hwa, Lee Myong Iis Nurhasanah Indra Wahyudin Fathonah Ismunandar Ismunandar Jarwinda Junaidi Junaidi Kurniawan, Setyo Budi Kuwat Triyana Lee Myong Hwa Lilik Hasanah Lilik Hasanah Lilik Hasanah lis Nurhasanah Lubis, Nur Hamidah Lubis, Willy Akmansyah Luthfianti, Halida Rahmi M. Barmawi M. M. Munir M. P. Ekaputra Maharati Hamida Maman Budiman Mamat Rokhmat Maria Evita Masturi Masturi Masturi Masturi Memoria Rosi Mentari, Sekar Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Mikrajuddin Mikrajuddin Mikrajuddin Mikrajudin Abdullah Mitra Djamal Mitra Djamal Mohamad Barmawi Muhammad Fauzan Muhammad Fauzul Imron Munir, Muhammad Miftahul Nafisah, Nuraini Nafisah, Nur’aini Nasution, Nur Saidah Ningsih Rezeki Noviyanto, Alvian Novriadi, Novriadi Nst, Rizky Sholatiah Yasin Nur A. Aprianti Nurul Taufiqu Rochman Oktaviani, Indri Priyanto, Aan Rahmayanti, Handika Dany Rahmondia N. S Rajak, Abdul Ramadhani, Dwi Zahra Ramadhani, Misliyatul Ramli Ramli Ramli Ramli Rezeki, Ningsih Ricky Dwi Septianto Risa Suryana Riska Ekawita Riska Ekawita Rodhiyah, Marathur Sahrul Saehana Sangian, Messiah Charity Septia Mahen, Ea Cahya Septianto, Ricky Dwi Silvia Surini Silvia Surini Sri Hartati Sukirno . Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Suprijadi Suprijadi Suprijadi Suprijadi Sutisna Sutisna Syahputra, Tri Siswandi Syuhada, Ibnu T. Suciati Tarmizi Taher Taufik Adi Nugraha Togar Saragi Toto Winata Toto Winata Toto Winata Widhya Budiawan Widhya Budiawan William Xaveriano Waresindo Yuan Alfinsyah Sihombing Yudha Gusti Wibowo Yudi Darma Yulkifli Yulkifli Zaki Suud Zulfi, Akmal