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Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD Budi Mulyanti; A. Subagio; F. S. Arsyad; P. Arifin; M. Barmawi; Irzaman Irzaman; Z. Jamal; U. Hashim
Journal of Mathematical and Fundamental Sciences Vol. 40 No. 2 (2008)
Publisher : Institute for Research and Community Services (LPPM) ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.5614/itbj.sci.2008.40.2.1

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In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnT) were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 oC to 700 oC and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX) and X-ray diffraction (XRD) methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM) and scanning electron microscopy (SEM) images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002) is 6.4 % and 3.2 % for the film grown at 650 oC and 700 oC, respectively. The lattice constant and full width at half maximum (FWHM) of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 oC and 700 oC, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.
Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device Ida Hamidah; Kardiawarman Kardiawarman; Budi Mulyanti; Andi Suhandi
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar

Abstract

Abstract. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density. The tunneling probability was calculated by employing the Schroedinger equation, WKB approximation and Green function. Width of potential well, width and height of barrier were varied to obtain the highest tunneling probability value. The current density was contributed by diffusion, and tunneling current densities. It was found that current density had a peak of 3950 A/m2 at 0.56 volt forward bias. Furthermore, the fabrication of p-i-n a-Si device with double barrier structure was successfully carried out. To realize the double barrier structure, optimization of optical band gap of barrier a-SiC:H was done by varying ratio of CH4 to [CH4+SiH4]. The fabrication of p-i-n a-Si device was then done by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique with a structure of glass substrate/TCO/p-a-Si:H (2.15 eV;140Ã…)/i-a-Si:H (1.81 eV;1800 Ã…)/barrier a-SiC:H (2.36 eV;45 Ã…)/potential well i-a-Si:H (1/81 eV; 30 Ã…)/barrier a-SiC:H (2.36 eV; 45 Ã…)/n-a-Si:H (1.81 eV;180 Ã…)/Al. The I-V characteristic of the device showed a peak current calue at 0.55 forward bias. Simulasi dan Fabrikasi Struktur Double Barrier pada Divais Amorphous SiliconSari. Aplikasi struktur double barrier (DB) pada divais amorphous silicon (a-Si) telah dilakukan untuk memperoleh beberapa parameter divais seperti probabilitas tunneling dan rapat arus. Probabilitas tunneling dihitung dengan menerapkan persamaan Schroedinger, pendekatan WKB dan fungsi Green. Lebar sumur potensial, lebar dan tinggi barrier telah divariasikan untuk memperoleh harga probabilitas tunneling yang maksimum. Rapat arus total dari divais dalam perhitungan ini merupakan jumlah dari rapat arus difusi dan rapat arus tunneling. Diperoleh bahwa rapat arus total memiliki nilai maksimum sebesar 3950 A/m2 pada tegangan bias maju 0,56 volt. Selanjutnya, telah berhasil juga difabrikasi divais p-i-n a-Si dengan struktur double barrier. Didapatkan bahwa karakteristik I-V dari divais menunjukkan adanya puncak rapat arus pada tegangan bias maju 0,55 volt.ihamidah@eudoramail.com
Realisasi Antena Yagi untuk Objek Pengukuran dalam Implementasi Simulasi Pola Radiasi Antena Asep Barnas Simanjuntak; Budi Mulyanti; Enjang Akhmad Juanda; Ade Gaffar Abdulah; Tata Supriyadi
Prosiding Industrial Research Workshop and National Seminar Vol 9 (2018): Industrial Research Workshop and National Seminar
Publisher : Politeknik Negeri Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1702.065 KB) | DOI: 10.35313/irwns.v9i0.1121

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Abstrak – Pada penelitian ini dilakukan perancangan dan implementasi antena Yagi 7 elemen pada frekuensi915 MHz menggunakan balun bazooka untuk objek pengukuran propagasi dan pola radiasi antena. AntenaYagi ini memiliki kontruksi yang sederhana dimana elemen-elemen parasitnya bisa diatur, ditambah ataudikurangi. Sistem pencatuan bazooka digunakan untuk meminimalisir efek pembebanan dari elemen-elemenparasit. Dengan demikian penambahan atau pengurangan elemen parasit untuk simulasi pola radiasi tidak akanmengubah impedansi input antena. Hasil pengukuran menunjukkan antena ini bekerja pada frekuensi 877.3 –943.2 MHz pada VSWR ≤ 2 dengan bandwidth 65.7_MHz. Pola radiasi yang dihasilkan uni-direksionaldengan gain H-plane 10.65 dB dan gain E-plane 11.45 dB.
PELATIHAN MICROSOFT OFFICE SPECIALIST (MOS) POWER POINT SEBAGAI MEDIA PEMBELAJARAN UNTUK GURU SMKN 1 CISARUA DALAM ERA INDUSTRI 4.0 Mariya Al Qibtiya; Dadang Lukman Hakim; Bambang Trisno; Budi Mulyanti; Yadi Mulyadi; Tuti Suartini; Elih Mulyana; Wawan Purnama; Aip Saripudin; Silmi At Thahirah Al Azhima; Roer Eka Pawinanto; Nurhidayatulloh Nurhidayatulloh
Jurnal Ilmiah Teknologi Infomasi Terapan Vol. 9 No. 1 (2022)
Publisher : Universitas Widyatama

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.33197/jitter.vol9.iss1.2022.957

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The era of industrial disruption has had many influences on human life, this has also affected the world of education. One way to improve teacher competence in the industrial revolution 4.0 era is to equip teachers with global scale capabilities, namely Microsoft Office Specialists or MOS. From these problems, our training took the initiative to hold Microsoft Office Specialist (MOS) Power Point Activities for vocational/high school teachers in the city of Bandung. This training adapts the Goad training model, namely this model consists of several cycles including: (1) training needs analysis; (2) training approach design; (3) development of training materials; (4) implementation of training; (5) evaluation and updating of training.
Simulasi Reaktor MOCVD Dengan Menggunakan FEMLAB Budi Mulyanti; Fitri S. Arsyad; Soegianto S; M. Barmawi; Sri Jatno W
Indonesian Journal of Physics Vol 13 No 2 (2002): Vol. 13 No.2, April 2002
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (2283.389 KB)

Abstract

Numerical simulation is presented in order to have optimal growth parameters when thin film GaN is grown in the MOCVD reactor. The simulation is performed by changing the growth parameters such as diffusivities and flow rates of gases, and the reactor’s geometries. Gases that are used in this simulation are trimethyl gallium (TMGa) and ammonia (NH3) as source gases and nitrogen (N2) as a carrier gas. The uniform thin film is obtained from this simulation, when the growth parameters are 0.1 m2s-1, 10-3ms-1, and 3.5 cm for gas diffusivity, gas flow rate and distance between reactor neck and substrate, respectively.
Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation Budi Mulyanti; Fitri S. Arsyad; P. Arifin; M. Budiman; Sri Jatno W; M. Barmawi
Indonesian Journal of Physics Vol 15 No 3 (2004): Vol. 15 No. 3, July 2004
Publisher : Institut Teknologi Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (203.136 KB)

Abstract

Growth of Ga1-xMnxN thin film in the vertical MOCVD (Metal Organic Chemical Vapor Depositions) reactor as a function of substrate temperature is analyzed by numerical simulation. Gases that are used as a source of Ga, N and Mn are trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc), respectively. Hydrogen (H2) is used as a carrier gas for both TMGa and CpMnTc. The objective of simulation is to obtain an optimal growth parameter, in which the growth rate is high and uniform. From the simulation results, it can be concluded that to achieve a highest growth rate, the substrate temperature should be maintained at about 1173 K and with this temperature the growth rate is nearly constant when the susceptor radial distance is between 3.5 cm and 4.5 cm.
Biomass-Based Supercapacitors Electrodes for Electrical Energy Storage Systems Activated Using Chemical Activation Method: A Literature Review and Bibliometric Analysis Ida Hamidah; Ramdhani Ramdhani; Apri Wiyono; Budi Mulyanti; Roer Eka Pawinanto; Lilik Hasanah; Markus Diantoro; Brian Yuliarto; Jumril Yunas; Andrivo Rusydi
Indonesian Journal of Science and Technology Vol 8, No 3 (2023): (ONLINE FIRST) IJOST: December 2023
Publisher : Universitas Pendidikan Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.17509/ijost.v8i3.60688

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Currently, carbon derived from biomass waste or residues is being intensively utilized as electrodes due to its excellent electrical properties, including high conductivity, appropriate porosity, and a specific surface area suitable for supercapacitor applications. Despite its advantages, the performance of supercapacitors made from biomass-derived carbon is insufficient for engineering applications because of the challenges in obtaining the mesoporous structure of activated carbon (AC). Therefore, this study highlights the potential of biomass-based carbon as the electrodes of a highly efficient supercapacitor, which can facilitate highly efficient current transport in energy storage systems. It comprehensively discusses various biomass material sources and activation methods to produce carbon, with a focus on the physical and electrical properties. Initially, the study discusses carbon activation methods and mechanisms to understand why activating agents and electrolyte solutions have a high specific surface area and specific capacitance. It then concentrates on the chemical activation method and its importance in making AC useful as an efficient electrode. Finally, in this study, various biomass sources were discussed to highlight the performance of supercapacitors electrodes originating from agricultural and wood residues relating to the specific capacitance and capacitance retention. Based on the obtained results, it is concluded that biomass-based carbon materials could be the most advantageous platform material for energy conversion and storage.
Pemanfaatan Sistem Irigasi Otomatis Berbasis Wireless Sensor Network Mulyanti, Budi; Nurhidayatulloh, Nurhidayatulloh; Juanda, Enjang Akhmad; Pawinanto, Roer Eka; Pantjawati, Arjuni Budi; Rafi Jatnika
CARADDE: Jurnal Pengabdian Kepada Masyarakat Vol. 5 No. 3 (2023): April
Publisher : Ilin Institute

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.31960/caradde.v5i3.1797

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Di Desa Jatisari, petani palawija biasa melakukan penyiraman rutin secara konvensional pada pagi dan sore hari terutama pada musim kemarau, yaitu dengan menyisir setiap baris tanaman menggunakan tangki gendong. Hal tersebut tentu saja memiliki berbagai kelemahan, diantaranya membutuhkan banyak waktu dan tenaga, beresiko bagi kesehatan petani, dan terdapat kemungkinan tidak meratanya pengairan. Untuk itu perlu dilakukan kegiatan pengabdian yang bertujuan untuk: (a) Menerapkan sistem pengairan otomatis untuk tanaman palawija di Desa Jatisari, dan (b) Menerapkan sistem aplikasi monitoring pengairan tanaman palawija berdasarkan data sensor kelembapan dan suhu tanah di lahan petani. Tahapan yang digunakan dalam Pengabdian ini dengan menggunakan pendekatan ADDIE (analysis, design, development, implementation, evaluation), yang disesuaikan dengan lahan yang tersedia. Sistem ini diimplementasi pada tanaman palawija milik salah satu petani desa Jatisari, kabupaten Garut. Implementasi sistem ini dimulai dari sensor membaca kelembaban tanah dan suhu tanah tanaman yang telah di program kesesuaiannya berdasarkan waktu yang telah ditentukan yaitu pada pukul 07.00 dan pukul 16.00. Dari hasil pengujian node sensor dan pengujian sistem aplikasi monitoring penyiramana, diperoleh hasil bahwa sistem dapat bekerja dengan error + 5%. Dengan menggunakan sistem yang telah dibangun ini, maka petani dapat melakukan pemantauan kelembaban dan suhu tanah di sejumlah titik yang tersebar di lahan palawija secara kontinyu melalui aplikasi dari jarak jauh secara real time. Dengan demikian, diharapkan petani dapat meningkatkan produktivitas dan kualitas hasil tanaman.
Optimasi dan Analisis Desain 3-D Piezoelectric Micropump pada Laju Aliran Fluida Nada Sadidah; Lilik Hasanah; Naftalia Trivenia Simbolon; Roer Eka Pawinanto; Chandra Wulandari; Budi Mulyanti; Ahmad Aminudin
Wahana Fisika Vol 7, No 1 (2022): June
Publisher : Universitas Pendidikan Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.17509/wafi.v7i1.43125

Abstract

Micropump adalah komponen penting dalam sistem mikrofluida dan digunakan untuk mengontrol jumlah cairan yang tepat dalam ukuran mikroliter hingga nanoliter. Penelitian ini bertujuan mengoptimasi desain 3-D micropump yang menggunakan aktuator piezoelektrik. Metode yang digunakan dalam penelitian ini adalah metode simulasi dengan perangkat lunak COMSOL Multiphysics 5.6. Micropump dianalisis dengan memvariasikan radius inlet dan outlet, tegangan penggerak, serta frekuensi kerja untuk menemukan laju aliran tertinggi. Ukuran radius pada inlet dan outlet divariasikan dari 0,6 mm sampai 1,4 mm dengan interval sebesar 0,2 mm. Hasil penelitian menunjukkan bahwa radius yang lebih tinggi memiliki laju aliran yang lebih rendah karena efisiensi rektifikasi yang lebih rendah. Namun, terdapat nilai optimum pada radius 0,8 mm dengan laju aliran tertinggi pada inlet dan outlet masing-masing 0,941 mL/menit dan 0,957 mL/menit. Selain itu, kenaikan tegangan penggerak menyebabkan peningkatan laju aliran. Namun, pengaruh kenaikan frekuensi kerja terhadap laju aliran berbanding terbalik dengan kenaikan tegangan penggerak yang diterapkan pada aktuator piezoelektrik. Semakin tinggi nilai frekuensi kerja maka laju aliran fluida pada inlet maupun outlet terus mengalami penurunan. Laju aliran pada frekuensi yang lebih rendah menyebabkan membran dapat mencapai titik maksimum amplitudo getaran. Hasil dari penelitian ini dapat dimanfaatkan untuk pengembangan dan optimasi desain pada aplikasi biomedis.
Aplikasi Penghitung Kecepatan Mobil dengan Akurasi Tinggi Menggunakan Yolo untuk Meminimasi Kecelakaan Henny, Henny; Baiquni, Muhammad Azhar; Mulyanti, Budi; Nasution, Muhammad Fadli; Setya Budi, Agus Heri
Telekontran : Jurnal Ilmiah Telekomunikasi, Kendali dan Elektronika Terapan Vol. 11 No. 2 (2023): TELEKONTRAN vol 11 no 2 Oktober 2023
Publisher : Program Studi Teknik Elektro, Fakultas Teknik dan Ilmu Komputer, Universitas Komputer Indonesia.

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.34010/telekontran.v11i2.10900

Abstract

One of the causes of accidents is the lack of vigilance among drivers and violations of vehicle speed exceeding the maximum limit. To mitigate these violations, traffic supervision is necessary, especially in accident-prone areas. This research introduces a video-based vehicle speed and license plate detection system developed using YOLOv5-DeepSORT and HyperLPR to address this issue. The system employs YOLOv5 and DeepSORT to detect and track vehicle movements, thereby obtaining the displacement of the vehicle, which serves as a reference for speed detection. HyperLPR, on the other hand, is utilized for license plate recognition. The research adopts an experimental methodology, involving video recording on the Cipali toll road section, which serves as input for the vehicle speed and license plate detection program. The evaluation of vehicle object detection using YOLOv5 yields a precision metric score of 100%. Moreover, the testing of vehicle speed detection reveals an average error percentage of 7.6% compared to the actual values. In terms of license plate detection, an overall character accuracy rate of 91.82% is achieved.Based on these findings, it can be concluded that the developed vehicle speed and license plate detection system exhibit excellent accuracy and could be considered for implementation, taking into account predefined implementation criteria.Keyword: Vehicle speed, vehicle license plate, YOLOv5, DeepSORT, HyperLPR.
Co-Authors A. Subagio A. Subagio ACHEAMPONG, KENNEDY Ade Gafar Abdullah, Ade Gafar Ade Gaffar Abdulah Adjei, Albert Agus Setiawan Agus Subagio Ahmad Aminudin Aip Saripudin Ajuni B. Pantjawati Al Husaeni, Dwi Fitria Amiruddin Supu Ampimah, Benjamin Chris Andi Suhandi Andrivo Rusydi Apri Wiyono Arjuni B Pantjawati Arjuni Budi Pantjawati Asep Barnas Simanjuntak Ayub Subandi Baiquni, Muhammad Azhar Bambang Trisno Bonsu, Prince Osei- Brian Yuliarto Budi, Agus Heri Setya Chandra Wulandari Dadang Lukman Hakim Dedi Rohendi Edi Supriyanto Eka Fitrajaya Rahman Eka Pawinanto, Roer Elih Mulyana, Elih Enjang Akhmad Juanda F. S. Arsyad F. S. Arsyad Fauzan, Jahril Nur Febriana, Iqbal Fitri S. Arsyad Fitri S. Arsyad Fitri Suryani Arsyad Henny Henny Heri Sutanto Heru Yuwono Ida Hamidah Ida Hamidah Ida Hamidah Ilhamdaniah Ilhamdaniah Iqbal Febriana Ira Herli Khoeriah Irzaman, Irzaman Jumril Yunas Jumril Yunas, Jumril Kardiawarman Kardiawarman Kennedy Barfi Yaw Agyeibi Lala Septem Riza Lia Muliani Lia Muliani Lilik Hasanah Luqmanul Hakim M. Barmawi M. Barmawi M. Barmawi M. Barmawi M. Budiman M. Budiman Maman Budiman Mariya Al Qibtiya Markus Diantoro Moehamad Barmawi Mohamad Barmawi Muhammad Fadli Nasution Mujamilah Mujamilah Nada Sadidah Naftalia Trivenia Simbolon Nurhidayatulloh Nurhidayatulloh Nurhidayatulloh, Nurhidayatulloh Oduro-Okyireh, George Oduro-Okyireh, Theodore P. Arifin P. Arifin P. Arifin P. Susthita Menon Pangestu, M. Assadillah Pepen Arifin Pratiwi Pratiwi Rafi Jatnika Ramdhani Ramdhani Ratna Nurvitasari Rifqi Md Zain, Ahmad Roer Eka Pawinanto, Roer Eka Sahari, Siti Kudnie Sahbudin Shaari Setiawan, Agus Setyo Nugroho, Harbi Silmi At Thahirah Al Azhima Soegianto S Sri Jatno W Sri Jatno W Sugandi, Gandi Sukirno Sukirno Sulistiyono, Yakub Eriyanto Supriyadi, Tata Tommi Hariyadi, Tommi Tommi Haryadi Tommi Haryadi Tuti Suartini U. Hashim Wahyu Sasongko Putro Wawan Purnama Wawan Purnama Widyaningrum Indrasari Wulandari, Chandra Yadi Mulyadi Yuski Maolid Rizki Faozan Yusron Tri Huda Z. Jamal