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All Journal Jurnal Sains Materi Indonesia TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Indonesian Journal of Science and Technology ELECTRANS Momentum: Physics Education Journal JITTER (Jurnal Ilmiah Teknologi Informasi Terapan) Jurnal Elektronika dan Telekomunikasi CARADDE: Jurnal Pengabdian Kepada Masyarakat Journal of Educational Research and Evaluation TELEKONTRAN: Jurnal Ilmiah Telekomunikasi, Kendali dan Elektronika Terapan Journal of Vocational Education Studies Industrial Research Workshop and National Seminar Indonesian Journal of Physics (IJP) Wahana Fisika : Jurnal Fisika dan Terapannya
Budi Mulyanti
Universitas Pendidikan Indonesia
Humanities Astronomy Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Environmental Science Industrial & Manufacturing Engineering Materials Science & Nanotechnology Mathematics Mechanical Engineering Physics Public Health Social Sciences Other

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RANCANG BANGUN BAND PASS FILTER MIKROSTRIP HAIRPIN DENGAN OPEN STUB DAN DEFECTED GROUND STRUCTURE (DGS) UNTUK FREKUENSI UMTS 3G (1920-1980 MHz) Agus Setiawan; Tommi Haryadi; Budi Mulyanti
ELECTRANS Vol 13, No 2 (2014): Volume 13, Nomor 2, Tahun 2014
Publisher : Universitas Pendidikan Indonesia

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Abstract

Pada penelitian ini telah dirancang Band Pass Filter (BPF) dengan frekuensi tengah 1950 MHz. Disain BPF dilakukan pada saluran mikrostrip dengan open stub dan defected  ground  structure (DGS) menggunakan metode hairpin. Simulasi dilakukan dengan menggunakan CST Studio Suite 2012 pada substrat rogers RT5880 yang memiliki permitivitas relatif 2,2 dan ketebalan 1,58 mm. Hasil simulasi BPF menggunakan elemen chebyshev orde ke empat menunjukan BPF memiliki bandwidth sempit dan terjadi sedikit peningkatan return loss. Sementara itu, hasil simulasi BPF  yaitu frekuensi kerja 1918-1979 MHz, insertion loss -1,3 dB, return loss -10,82 dB, impedansi karakteristik 50,3 ohm,dan bandwidth 61 MHz. Sedangkan  hasil pengukuran menunjukan bahwa frekuensi kerja 1926-1986 MHz, insertion loss -1,7 dB, return loss -19 dB, VSWR 1,28, dan bandwidth 60 MHz.
Effect of Growth Temperature and Mn Incorporation on GaN:Mn Thin Films Grown by Plasma-Assisted MOCVD Budi Mulyanti; A. Subagio; F. S. Arsyad; P. Arifin; M. Barmawi; Irzaman Irzaman; Z. Jamal; U. Hashim
Journal of Mathematical and Fundamental Sciences Vol. 40 No. 2 (2008)
Publisher : Institute for Research and Community Services (LPPM) ITB

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.5614/itbj.sci.2008.40.2.1

Abstract

In this paper, the growth of GaN:Mn thin films by plasma-assisted metalorganic chemical vapor deposition (PAMOCVD) method is reported. The method used in this study, utilizes a microwave cavity as a cracking cell to produce nitrogen radicals, which in turn reduce the growth temperature. Trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnT) were used as a source of Ga, N and Mn, respectively, while hydrogen gas was used as a carrier gas for both TMGa and CpMnT. The effect of growth temperature and Mn incorporation on structural properties and surface morphology of GaN:Mn films are presented. The growth of GaN:Mn thin films were conducted at varied growth temperature in range of 625 oC to 700 oC and the Mn/Ga molar fraction in the range of 0.2 to 0.5. Energy dispersive of X-ray (EDX) and X-ray diffraction (XRD) methods were used to analyze atomic composition and crystal structure of the grown films, respectively. The surface morphology was then characterized using both atomic force microscopy (AFM) and scanning electron microscopy (SEM) images. A systematic XRD analysis reveal that maximum Mn incorporation that still produces single phase GaN:Mn (0002) is 6.4 % and 3.2 % for the film grown at 650 oC and 700 oC, respectively. The lattice constant and full width at half maximum (FWHM) of the single phase films depend on the Mn concentration. The decrease in lattice constant accompanied by the increase in FWHM is due to incorporation of substitutional Mn on the Ga sub-lattice. The maximum values of doped Mn atoms incorporated in the wurtzite structure of GaN:Mn as substitutional atoms on Ga sub-lattice are 2.0 % and 2.5 % at 650 oC and 700 oC, respectively. AFM and SEM images show that the film grown at lower growth temperature and Mn concentration has a better surface than that of film grown at higher growth temperature and Mn concentration.
Simulation and Fabrication of Double Barrier Structure of P-I-N Amorphous Silicon (a-Si) Device Ida Hamidah; Kardiawarman Kardiawarman; Budi Mulyanti; Andi Suhandi
Journal of Mathematical and Fundamental Sciences Vol. 33 No. 1 (2001)
Publisher : Institute for Research and Community Services (LPPM) ITB

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Abstract

Abstract. The application of double barrier (DB) structure in p-i-n amorphous silicon (a-Si) device was studied. The theoretical study was done to obtain device parameters such as tunneling probability and current density. The tunneling probability was calculated by employing the Schroedinger equation, WKB approximation and Green function. Width of potential well, width and height of barrier were varied to obtain the highest tunneling probability value. The current density was contributed by diffusion, and tunneling current densities. It was found that current density had a peak of 3950 A/m2 at 0.56 volt forward bias. Furthermore, the fabrication of p-i-n a-Si device with double barrier structure was successfully carried out. To realize the double barrier structure, optimization of optical band gap of barrier a-SiC:H was done by varying ratio of CH4 to [CH4+SiH4]. The fabrication of p-i-n a-Si device was then done by using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique with a structure of glass substrate/TCO/p-a-Si:H (2.15 eV;140Ã…)/i-a-Si:H (1.81 eV;1800 Ã…)/barrier a-SiC:H (2.36 eV;45 Ã…)/potential well i-a-Si:H (1/81 eV; 30 Ã…)/barrier a-SiC:H (2.36 eV; 45 Ã…)/n-a-Si:H (1.81 eV;180 Ã…)/Al. The I-V characteristic of the device showed a peak current calue at 0.55 forward bias. Simulasi dan Fabrikasi Struktur Double Barrier pada Divais Amorphous SiliconSari. Aplikasi struktur double barrier (DB) pada divais amorphous silicon (a-Si) telah dilakukan untuk memperoleh beberapa parameter divais seperti probabilitas tunneling dan rapat arus. Probabilitas tunneling dihitung dengan menerapkan persamaan Schroedinger, pendekatan WKB dan fungsi Green. Lebar sumur potensial, lebar dan tinggi barrier telah divariasikan untuk memperoleh harga probabilitas tunneling yang maksimum. Rapat arus total dari divais dalam perhitungan ini merupakan jumlah dari rapat arus difusi dan rapat arus tunneling. Diperoleh bahwa rapat arus total memiliki nilai maksimum sebesar 3950 A/m2 pada tegangan bias maju 0,56 volt. Selanjutnya, telah berhasil juga difabrikasi divais p-i-n a-Si dengan struktur double barrier. Didapatkan bahwa karakteristik I-V dari divais menunjukkan adanya puncak rapat arus pada tegangan bias maju 0,55 volt.ihamidah@eudoramail.com
Karakteristik Life Time dan Efisiensi Modul Surya Berbasis Pewarna Menggunakan Interkoneksi Seri Iqbal Febriana; Lia Muliani; Budi Mulyanti
Jurnal Elektronika dan Telekomunikasi Vol 15, No 1 (2015)
Publisher : LIPI Press

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.14203/jet.v15.28-32

Abstract

Sel surya berbasis pewarna atau yang dikenal dengan dye-sensitized solar cell (DSSC) merupakan sel surya generasi baru yang bekerja berdasarkan photoelectrochemical. Proses absorpsi cahaya dilakukan oleh molekul pewarna (dye) dan proses pemisahan muatan oleh bahan semikonduktor anorganik (dalam penelitian ini digunakan TiO2). Dalam penelitian ini dilakukan pabrikasi modul surya menggunakan lapisan partikel nano TiO2 (non-scattering) dan menggunakan campuran lapisan partikel nano TiO2 dengan lapisan partikel sub-mikron TiO2 (scattering). Tujuan penelitian ini adalah untuk mengetahui waktu hidup (life time) dan efisiensi modul surya dengan bahan yang berbeda. Pabrikasi modul surya ini menggunakan teknik screen printing. Karakteristik life time diperoleh dari hasil pengukuran I-V yang dilakukan secara manual menggunakan lampu LED 15 Watt dengan intensitas 40 mW/cm2 . Pengujian life time dilakukan selama 500 jam, dan hasilnya menunjukkan bahwa modul surya dengan lapisan scattering dapat mempengaruhi karakteristik life time namun efisiensi yang didapatkan kurang baik yaitu sebesar 0,31% sedangkan modul surya dengan lapisan non-scattering menunjukkan efisiensi yang baik yaitu sebesar 1,83% namun karakteristik life time yang kurang baik.
Reconstruction of vocational high school physics instructional materials Ira Herli Khoeriah; Ade Gafar Abdullah; Budi Mulyanti
Momentum: Physics Education Journal Vol 4 No 2 (2020)
Publisher : Universitas PGRI Kanjuruhan Malang

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.21067/mpej.v4i2.4572

Abstract

Instructional materials for static electricity and dynamic electricity for Physics subjects in Vocational High Schools are not in accordance with the scope of the material contained in the Electronics Department: (1) The purpose of this study is to provide an overview of the teaching materials of static electricity and dynamic electricity in Physics in the Electronics Department; (2) Qualitative Content Analysis Method was used to explore the contents of seven book titles with different publishers and is strengthened through inter-views with Physics teachers in the Department of Electronics. In the process of analyzing the content of the contents of this textbook used Atlas.ti computer software; (3) The findings show that the content in the Vocational High School Physics books pub-lished by several publishers does not yet have specific conformity with the Department of Electronics; (4) conclusion. There are code relating to the content content, researchers only specify it into 39 code titles in the VHS Physics Textbook. from qualitative analysis. The level of compatibility of the content of the material with the 2013 Revised Curriculum was 42.86%, the availability of pictures was 75%, examples of questions from the equa-tions of each series were 85.71%, the suitability of the practicum with the Electrical Clump was 14.29%. content conformity with the Revised 2013 Curriculum and electro majors has a slightly low percentage of 42.86%. So in this study, the authors reconstruct VHS Physics teaching materials for the Electrical Department and also make VHS Physics teaching materials for the Electrical Clump.
Realisasi Antena Yagi untuk Objek Pengukuran dalam Implementasi Simulasi Pola Radiasi Antena Asep Barnas Simanjuntak; Budi Mulyanti; Enjang Akhmad Juanda; Ade Gaffar Abdulah; Tata Supriyadi
Prosiding Industrial Research Workshop and National Seminar Vol 9 (2018): Industrial Research Workshop and National Seminar
Publisher : Politeknik Negeri Bandung

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (1702.065 KB) | DOI: 10.35313/irwns.v9i0.1121

Abstract

Abstrak – Pada penelitian ini dilakukan perancangan dan implementasi antena Yagi 7 elemen pada frekuensi915 MHz menggunakan balun bazooka untuk objek pengukuran propagasi dan pola radiasi antena. AntenaYagi ini memiliki kontruksi yang sederhana dimana elemen-elemen parasitnya bisa diatur, ditambah ataudikurangi. Sistem pencatuan bazooka digunakan untuk meminimalisir efek pembebanan dari elemen-elemenparasit. Dengan demikian penambahan atau pengurangan elemen parasit untuk simulasi pola radiasi tidak akanmengubah impedansi input antena. Hasil pengukuran menunjukkan antena ini bekerja pada frekuensi 877.3 –943.2 MHz pada VSWR ≤ 2 dengan bandwidth 65.7_MHz. Pola radiasi yang dihasilkan uni-direksionaldengan gain H-plane 10.65 dB dan gain E-plane 11.45 dB.
PELATIHAN MICROSOFT OFFICE SPECIALIST (MOS) POWER POINT SEBAGAI MEDIA PEMBELAJARAN UNTUK GURU SMKN 1 CISARUA DALAM ERA INDUSTRI 4.0 Mariya Al Qibtiya; Dadang Lukman Hakim; Bambang Trisno; Budi Mulyanti; Yadi Mulyadi; Tuti Suartini; Elih Mulyana; Wawan Purnama; Aip Saripudin; Silmi At Thahirah Al Azhima; Roer Eka Pawinanto; Nurhidayatulloh Nurhidayatulloh
Jurnal Ilmiah Teknologi Infomasi Terapan Vol. 9 No. 1 (2022)
Publisher : Universitas Widyatama

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.33197/jitter.vol9.iss1.2022.957

Abstract

The era of industrial disruption has had many influences on human life, this has also affected the world of education. One way to improve teacher competence in the industrial revolution 4.0 era is to equip teachers with global scale capabilities, namely Microsoft Office Specialists or MOS. From these problems, our training took the initiative to hold Microsoft Office Specialist (MOS) Power Point Activities for vocational/high school teachers in the city of Bandung. This training adapts the Goad training model, namely this model consists of several cycles including: (1) training needs analysis; (2) training approach design; (3) development of training materials; (4) implementation of training; (5) evaluation and updating of training.
Simulasi Reaktor MOCVD Dengan Menggunakan FEMLAB Budi Mulyanti; Fitri S. Arsyad; Soegianto S; M. Barmawi; Sri Jatno W
Indonesian Journal of Physics Vol 13 No 2 (2002): Vol. 13 No.2, April 2002
Publisher : Institut Teknologi Bandung

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Abstract

Numerical simulation is presented in order to have optimal growth parameters when thin film GaN is grown in the MOCVD reactor. The simulation is performed by changing the growth parameters such as diffusivities and flow rates of gases, and the reactor’s geometries. Gases that are used in this simulation are trimethyl gallium (TMGa) and ammonia (NH3) as source gases and nitrogen (N2) as a carrier gas. The uniform thin film is obtained from this simulation, when the growth parameters are 0.1 m2s-1, 10-3ms-1, and 3.5 cm for gas diffusivity, gas flow rate and distance between reactor neck and substrate, respectively.
Dependence of Ga1-xMnxN Thin Films Growth on Substrate Temperature in Vertical MOCVD Reactor by Numerical Simulation Budi Mulyanti; Fitri S. Arsyad; P. Arifin; M. Budiman; Sri Jatno W; M. Barmawi
Indonesian Journal of Physics Vol 15 No 3 (2004): Vol. 15 No. 3, July 2004
Publisher : Institut Teknologi Bandung

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Abstract

Growth of Ga1-xMnxN thin film in the vertical MOCVD (Metal Organic Chemical Vapor Depositions) reactor as a function of substrate temperature is analyzed by numerical simulation. Gases that are used as a source of Ga, N and Mn are trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc), respectively. Hydrogen (H2) is used as a carrier gas for both TMGa and CpMnTc. The objective of simulation is to obtain an optimal growth parameter, in which the growth rate is high and uniform. From the simulation results, it can be concluded that to achieve a highest growth rate, the substrate temperature should be maintained at about 1173 K and with this temperature the growth rate is nearly constant when the susceptor radial distance is between 3.5 cm and 4.5 cm.
Biomass-Based Supercapacitors Electrodes for Electrical Energy Storage Systems Activated Using Chemical Activation Method: A Literature Review and Bibliometric Analysis Ida Hamidah; Ramdhani Ramdhani; Apri Wiyono; Budi Mulyanti; Roer Eka Pawinanto; Lilik Hasanah; Markus Diantoro; Brian Yuliarto; Jumril Yunas; Andrivo Rusydi
Indonesian Journal of Science and Technology Vol 8, No 3 (2023): (ONLINE FIRST) IJOST: December 2023
Publisher : Universitas Pendidikan Indonesia

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.17509/ijost.v8i3.60688

Abstract

Currently, carbon derived from biomass waste or residues is being intensively utilized as electrodes due to its excellent electrical properties, including high conductivity, appropriate porosity, and a specific surface area suitable for supercapacitor applications. Despite its advantages, the performance of supercapacitors made from biomass-derived carbon is insufficient for engineering applications because of the challenges in obtaining the mesoporous structure of activated carbon (AC). Therefore, this study highlights the potential of biomass-based carbon as the electrodes of a highly efficient supercapacitor, which can facilitate highly efficient current transport in energy storage systems. It comprehensively discusses various biomass material sources and activation methods to produce carbon, with a focus on the physical and electrical properties. Initially, the study discusses carbon activation methods and mechanisms to understand why activating agents and electrolyte solutions have a high specific surface area and specific capacitance. It then concentrates on the chemical activation method and its importance in making AC useful as an efficient electrode. Finally, in this study, various biomass sources were discussed to highlight the performance of supercapacitors electrodes originating from agricultural and wood residues relating to the specific capacitance and capacitance retention. Based on the obtained results, it is concluded that biomass-based carbon materials could be the most advantageous platform material for energy conversion and storage.
Co-Authors A. Subagio A. Subagio ACHEAMPONG, KENNEDY Ade Gafar Abdullah, Ade Gafar Ade Gaffar Abdulah Adjei, Albert Agus Subagio Ahmad Aminudin Aip Saripudin Ajuni B. Pantjawati Amiruddin Supu Ampimah, Benjamin Chris Andi Suhandi Andrivo Rusydi Apri Wiyono Arjuni B Pantjawati Arjuni Budi Pantjawati Asep Barnas Simanjuntak Ayub Subandi Baiquni, Muhammad Azhar Bambang Trisno Bonsu, Prince Osei- Brian Yuliarto Budi, Agus Heri Setya Chandra Wulandari Dadang Lukman Hakim Dedi Rohendi Edi Supriyanto Eka Pawinanto, Roer Elih Mulyana, Elih Enjang Akhmad Juanda F. S. Arsyad F. S. Arsyad Fauzan, Jahril Nur Febriana, Iqbal Fitri S. Arsyad Fitri S. Arsyad Fitri Suryani Arsyad Henny Henny Heri Sutanto Heru Yuwono Ida Hamidah Ida Hamidah Ida Hamidah Iqbal Febriana Ira Herli Khoeriah Irzaman, Irzaman Jumril Yunas Jumril Yunas, Jumril Kardiawarman Kardiawarman Lia Muliani Lia Muliani Lilik Hasanah Luqmanul Hakim M. Barmawi M. Barmawi M. Barmawi M. Barmawi M. Budiman M. Budiman Maman Budiman Mariya Al Qibtiya Markus Diantoro Moehamad Barmawi Mohamad Barmawi Muhammad Fadli Nasution Mujamilah Mujamilah Nada Sadidah Naftalia Trivenia Simbolon Nurhidayatulloh Nurhidayatulloh Nurhidayatulloh, Nurhidayatulloh Oduro-Okyireh, George Oduro-Okyireh, Theodore P. Arifin P. Arifin P. Arifin P. Susthita Menon Pangestu, M. Assadillah Pepen Arifin Rafi Jatnika Ramdhani Ramdhani Ratna Nurvitasari Rifqi Md Zain, Ahmad Roer Eka Pawinanto, Roer Eka Sahari, Siti Kudnie Sahbudin Shaari Setiawan, Agus Setyo Nugroho, Harbi Silmi At Thahirah Al Azhima Soegianto S Sri Jatno W Sri Jatno W Sugandi, Gandi Sukirno Sukirno Supriyadi, Tata Tommi Hariyadi, Tommi Tommi Haryadi Tommi Haryadi Tuti Suartini U. Hashim Wahyu Sasongko Putro Wawan Purnama Wawan Purnama Widyaningrum Indrasari Wulandari, Chandra Yadi Mulyadi Yuski Maolid Rizki Faozan Yusron Tri Huda Z. Jamal