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All Journal J-Sil (Jurnal Teknik Sipil dan Lingkungan) BERKALA FISIKA Jurnal Ilmu Dasar Jurnal Penelitian Fisika dan Aplikasinya (JPFA) Jurnal Sains Materi Indonesia Jurnal Sains dan Teknologi Nuklir Indonesia (Indonesian Journal of Nuclear Science and Technology) TELKOMNIKA (Telecommunication Computing Electronics and Control) Jurnal Pendidikan Fisika Indonesia Jurnal Matematika & Sains Journal of Mathematical and Fundamental Sciences Journal of Engineering and Technological Sciences Widyariset Science and Technology Indonesia Indonesian Journal of Chemistry Jurnal Otomasi Kontrol dan Instrumentasi WIDYA LAKSANA Jurnal Teori dan Aplikasi Fisika Indonesian Journal of Electrical Engineering and Computer Science Widyariset El-Hekam : Jurnal Studi Keislaman Pharmaceutical Sciences and Research (PSR) Indonesian Journal of Physics (IJP)
Khairurrijal Khairurrijal
Kelompok Keilmuan Fisika Material Elektronik, Fakultas Matematika dan Ilmu Pengetahuan Alam, Institut Teknologi Bandung
Aerospace Engineering Astronomy Automotive Engineering Biochemistry, Genetics & Molecular Biology Chemical Engineering, Chemistry & Bioengineering Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Control & Systems Engineering Decision Sciences, Operations Research & Management Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Environmental Science Immunology & microbiology Industrial & Manufacturing Engineering Library & Information Science Materials Science & Nanotechnology Mathematics Mechanical Engineering Medicine & Pharmacology Neuroscience Physics Social Sciences Transportation Other

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FERROELECTRIC PROPERTIES OF BaBi4Ti4O15 DOPED WITH Pb2+, Al3+, Ga3+, In3+, Ta5+ AURIVILLIUS PHASES Afifah Rosyidah; Djulia Onggo; Khairurrijal Khairurrijal; Ismunandar Ismunandar
Indonesian Journal of Chemistry Vol 9, No 3 (2009)
Publisher : Universitas Gadjah Mada

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (113.216 KB) | DOI: 10.22146/ijc.21505

Abstract

In recent years, the ferroelectric properties of aurivillius oxides have attracted interest and an extensive amount of work has been done toward the realization of their potential application in nonvolatile memories (FeRAM: ferroelectric random access memory). Recently, we have carried out computer simulation in atomic scale in order to predict the energies associated with the accommodation of aliovalent and isovalent dopants (Pb2+, Al3+, Ga3+, In3+, Ta5+) in the aurivillius structure of BaBi4Ti4O15. In this work, the predicted stable phases were synthesized using solid state reactions and their products then were characterized using powder X-ray diffraction method. The cell parameters were determined using Rietveld refinement in orthorhombic system with space group of A21am. Results from the ferroelectric properties measurement of BaBi4Ti4O15 were also presented. The cell parameters for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ were a = 5.47116(4) b = 5.45636(5) c = 41.8649(3) Å; a = 5.47104(4) b = 5.45634(4) c = 41.8640(3) Å; a = 5.47112(4) b = 5.45648(4) c = 41.8643(3) Å; a = 5.47111(4) b = 5.45645(5) c = 41.8649(3) Å; and a = 5.47134(4) b = 5.45588(4) c = 41.8639(5) Å. The ferroelectric properties measurement for BaBi4Ti4O15 doped with Pb2+, Al3+, Ga3+,In3+, Ta5+ showed that the Pr = 15.225 mC/cm2, Ec = 33.96 kV/cm; Pr = 15.925 mC/cm2, Ec = 35.724 kV/cm; Pr = 16.625 mC/cm2, Ec = 36.504 kV/cm; Pr = 15.57 mC/cm2, Ec = 32.925 kV/cm; Pr = 17.2827 mC/cm2, Ec = 37.44 kV/cm.
A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices Endah Rahmawati; Riska Ekawita; Maman Budiman; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 6: October 2012
Publisher : Institute of Advanced Engineering and Science

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Abstract

Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source.  Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved. DOI: http://dx.doi.org/10.11591/telkomnika.v10i6.1182
Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor Fatimah Arofiati Noor; Ferry Iskandar; Mikrajuddin Abdullah; Khairurrijal khairurrijal
Indonesian Journal of Electrical Engineering and Computer Science Vol 10, No 3: July 2012
Publisher : Institute of Advanced Engineering and Science

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Abstract

In this paper, we have developed a model of the tunneling currents through a high-k dielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate tunneling currents in TiN/HfSiOxN/SiO2/p-Si MOS capacitors. The calculated results show that as the gate electron velocity increases, the transmittance decreases and therefore the tunneling current reduces. The tunneling current becomes lower as the effective oxide thickness (EOT) of HfSiOxN layer increases. When the incident electron passed through the barriers in the normal incident to the interface, the electron tunneling process becomes easier. It was also shown that the tunneling current was independent of the substrate orientation. Moreover, the model could be used in designing high speed MOS devices with low tunneling currents. DOI: http://dx.doi.org/10.11591/telkomnika.v10i3.607
Optimization of PVA-Arabic Gum–Honey-based Electrospun Nanofibers as Candidate Carrier for Peptide and Protein Delivery Rezeki, Ningsih; Khairurrijal,; Surini, Silvia
Pharmaceutical Sciences and Research Vol. 6, No. 2
Publisher : UI Scholars Hub

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Abstract

Nanofibers dressing exhibit several advantageous characteristics for accelerating wound healing, such as its similar structure to the extracellular matrix (ECM), high surface area/volume ratio, high porosity and high loading capacity of drug. The nanofibers dressing which were prepared by the electrospinning technique using combination of synthetic and natural polymer excipients capable of fulfilling the ideal wound dressing criteria. This study aimed to develop nanofibers dressing prepared from polyvinyl alcohol (PVA), Arabic gum (GA) and honey by electrospinning method. This study focused on the effect of electrospinning parameters and the morphology of electrospun nanofibers of the blended solutions made from PVA (9% w/v) – GA (1% w/v) and honey (at varied concentrations of 0;1;3% w/v) with or without Triton X-100 (0.05% v/v). The effect of varied process parameters such as voltage and flow rate in electrospinning was also investigated. The blended solutions with the various concentration of honey at 0;1;3% w/v and Triton X-100 were named as FAt, FBt, and FCt, respectively, while the blended solutions without Triton X-100, were named as FA, FB, and FC. The optimum electrospining parameter were 18 KV and 5 µl/minute for FAt, FBt, and FCt; and 20 KV and 10 µl/minute for FA, FB, and FC. Electrospun nanofibers of FAt, FBt, FCt showed smoother and more uniform fibers in comparison to the nanofibers FA, FB, and FC. The average nanofibers diameter of FAt, FBt, FCt were 244±45; 266±45; 283±57 nm, respectively, while the average nanofibers diameter of FA, FB, FC was 406±140, 457±168, 594±204 nm, respectively. Higher concentration of honey increased the diameters of nanofibers. The average nanofibers diameter of FAt, FBt, and FCt were within nanoscale in range of the ECM (50-500 nm), which were suitable for accelerating wound healing. Therefore, this study indicated that PVA-GA-honey nanofibers dressing is suitable to be further developed as carrier for growth factors
Pemodelan dan Simulasi Arus Terobosan dalam Devais MOS Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 14 No 3 (2003): Vol. 14 No.2, Juli 2003
Publisher : Institut Teknologi Bandung

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Abstract

1.5-2.0 nm thick gate oxides are required for the future metal-oxide-semiconductor field-effect transistors (MOSFETs) with 100-nm gate length. An accurate model is needed to predict the tunneling current through thinner gate oxides for the development of the transistor with the gate length less than 100 nm. The tunneling current is calculated on the basis of Harrison’s approach with the conditions that both sides of the oxide layer of he transistor have sharp interfaces and the BenDaniel-Duke effective mass approximation holds. Using the nonparabolic energy-momentum dispersion relation of he band gap of the gate oxide, the tuneling current through the gate oxide with thickness of 1.65-3.90 nm can be reproduced well by the model.
Modeling of Temperature Dependence of Current in Metal-Oxide-SemiconductorCapacitors after Quasi Breakdown Fatimah A. Noor; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 14 No 3 (2003): Vol. 14 No.2, Juli 2003
Publisher : Institut Teknologi Bandung

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Abstract

A simple model of temperature dependence of current in MOS capacitors after quasi breakdown was obtained. In developing the simple model, it was assumed that electron traps are created in the oxide layer during high electric field injection of electrons. Further assumptions were that transport of electrons from one trap to another occurs due to an activated process of motion and the traps have an exponential distribution in energy. The results calculated using the model fit well the measured data.
Deposition of NiFeCo Thin Film for Giant Magnetoresistance (GMR) Material by dc-Unbalanced Magnetron Sputtering Method Togar Saragi; Mitra Djamal; Khairurrijal Khairurrijal; M. Barmawi
Indonesian Journal of Physics Vol 14 No 3 (2003): Vol. 14 No.2, Juli 2003
Publisher : Institut Teknologi Bandung

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Abstract

Deposition of NiFeCo thin films have been successfully grown by dc-unbalanced magnetron sputtering method. The linearity coefficient of thin films were 0.9169 at horizontal position and 0.953 at vertical position (sample 250902) and 0.8076 at horizontal position and 0.889 at vertical position (sample 260902), which is close to 1 for the ideal R-H characteristic. From XRD characterization, it was shown that the NiFeCo thin films were amorphous, and small grains, which was observed by SEM. The thin films thickness were 0.42 micrometer (sample 250902) and 0.26 micrometer (sample 260902). EDAX characterization shows that the composition of weight percent were: Ni(71.57%):Fe(7.44%):Co(20.99%) for sample 250902 and Ni(72.21%):Fe(10.27%):Co(17.25%) for sample 260902. These preliminary results will be discussed for future possibility of fabrication thin films in the prospect for device applications.
Sub-band States in a Nanometer Width Silicon Accumulation Layer/ Vacuum Structure Obtained from Self-Consistent Solution of the Coupled Schrödinger-Poisson Equation Adi Bagus Suryamas; Mikrajuddin Mikrajuddin; Yudi Darma; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 17 No 1 (2006): Vol. 17 No. 1, January 2006
Publisher : Institut Teknologi Bandung

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Abstract

A vacuum microelectronic device based on an n-type Si(100)-vacuum structure was theoretically studied. A nanometer width accumulation layer in the Si(100) region is created when a negative voltage is applied to the Si(100). The potential profile of the structure was obtained from solving self-consistently the coupled Schrödinger-Poisson equation with inclusion of the space charge and quantum effects. The finite difference method was employed in the self-consistent solution. It was found that the quantum well in the Si(100) region is deep and narrow with a small bump, which could cause resonant tunneling phenomena in the vacuum device. Three lowest sub-band states, which are composed of two states in the lower valley and one in the higher valley, exist in the quantum well. The sub-band energy levels increase with increasing the external electric field. The lowest energy level of each valley become lower than the Fermi energy as the electric field is higher than 50 MV/cm. Most electrons occupy the lowest state of each valley. The occupancy of the lowest state of the lower valley is lower than that of the lowest state of the higher valley because the degeneracy and density of states mass of the state of the higher valley are higher than those of the state of the lower valley. The lifetimes of all states decrease exponentially as the external electric field is increased. As the electric field becomes higher than 30 MV/cm, the lifetime is less than 100 s. Therefore, electrons have probability of escaping the vacuum barrier via tunneling process.
Spin Dependent Tunneling through a Nanometer-thick Square Barrier Based on Zinc-blende Structure Material Adi Bagus Suryamas; Mikrajuddin Abdullah; Khairurrijal Khairurrijal
Indonesian Journal of Physics Vol 17 No 2 (2006): Vol. 17 No. 2, April 2006
Publisher : Institut Teknologi Bandung

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Abstract

Spin dependent tunneling through a nanometer thick square barrier based on zinc- blende structure material has a great deal of attention due to its potential application in spintronics devices. An analytic expression of the transmittance T of an electron with spin polarization has been derived by adding the Dresselhauss term to the commonly used Hamiltonian and solving the Schrödinger equation. Solutions of the Schrödinger equation give two states referred as the “up” or “+” and “down or “-” spin states. It was found that the “up” and the “down” state transmittances are asymmetric to the axis at the normal incidence (θ=0o). Moreover, at the normal incidence the transmittances are equal because the parallel wave vectors are zero and not the highest. In addition, it was also found the relation T+(θ)= T-(-θ) due to the anisotropic properties of heterostructure materials.
An Improved Analytic Method Based on Airy Functions Approach to Calculate Electron Direct Transmittance in Anisotropic Heterostructure with Bias Voltage Lilik Hasanah; Khairurrijal Khairurrijal; Mikrajuddin Abdullah; Toto Winata; Sukirno Sukirno
Indonesian Journal of Physics Vol 17 No 3 (2006): Vol. 17 No. 3, July 2006
Publisher : Institut Teknologi Bandung

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Abstract

An analytic expression of transmittance based on the Airy wavefunctions approach has been derived for an electron through an anisotropic heterostructure with an applied voltage to the barrier of the heterostructure. The Si(110)|Si0.5Ge0.5|Si(110) heterostructure was used to examine the analytic expression. In order to evaluate the Airy wavefunctions approach, the transfer matrix method, which is a method widely applied for various applications, was employed as a reference. It was found that the transmittance calculated by the Airy wavefunctions approach fits perfectly that obtained by the transfer matrix method. The exponential wavefunctions approach in obtaining the transmittance was also evaluated. The transmittance obtained by the exponential wavefunctions is always lower than the transfer matrix method-based transmittance. As the electron total energy or applied voltage increases, the difference between the exponential wavefunctions- and transfer matrix method-based transmittances increases. Thus, the Airy wavefunctions approach improves the exponential wavefunctions approach to calculate the electron direct transmittance.
Co-Authors A. Suhendi A. Y. Nuryantini A.A. Ketut Agung Cahyawan W Adhha, Nurul Adi Bagus Suryamas Adi Bagus Suryamas Adi Bagus Suryamas Afifah Rosyidah Agus Riyanto Ahmad Aminudin Ahmad Fahmi Alan Maulana Alan Maulana Alvian Hayu Sudibya Ambran Hartono Andika Putra Anrokhi, Mohamad Samsul Apoji, Dayu Arif Surachman Aris Priatama Aris Priatama Astuti Astuti Aunuddin Syabba Azzahwa, Taufik Bambang Ariwahjoedi Bambang Ariwahjoedi Bebeh Wahid Nuryadin Bimastyaji Surya Ramadan Cuk Imawan Darsikin Darsikin Dayu Apoji Deddy Kurniadi Djulia Onggo Edi Sanjaya Edi Wibowo Edy Wibowo Ekawita, Riska Endah Rahmawati Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah A. Noor Fatimah Arofiati Noor Fauzi Ahmad Bogas Ferry Iskandar Freddy Haryanto Freddy Haryanto H Mahfudz Hasbullah Nawir, Hasbullah Hermawan K. Dipojono Hernawan Mahfudz Hernawan Mahfudz Heru Susanto Hutapea, Alfon Hutwan Syarifuddin Hwa, Lee Myong Iis Nurhasanah Indra Wahyudin Fathonah Ismunandar Ismunandar Jarwinda Junaidi Junaidi Kurniawan, Setyo Budi Kuwat Triyana Lee Myong Hwa Lilik Hasanah Lilik Hasanah Lilik Hasanah lis Nurhasanah M. Barmawi M. M. Munir M. P. Ekaputra Maharati Hamida Maman Budiman Maman Budiman Maman Budiman Maman Budiman Maman Budiman Mamat Rokhmat Maria Evita Masturi Masturi Masturi Masturi Memoria Rosi Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Abdullah Mikrajuddin Mikrajuddin Mikrajuddin Mikrajuddin Mikrajudin Abdullah Mitra Djamal Mitra Djamal Mohamad Barmawi Muhammad Fauzan Muhammad Fauzul Imron Muhammad Miftahul Munir Novriadi, Novriadi Nur A. Aprianti Rahmayanti, Handika Dany Rahmondia N. S Rajak, Abdul Ramli Ramli Ramli Ramli Rezeki, Ningsih Ricky Dwi Septianto Risa Suryana Riska Ekawita Riska Ekawita S Saehana Sekar Mentari Septia Mahen, Ea Cahya Septianto, Ricky Dwi Silvia Surini Sukirno . Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Sukirno Suprijadi Suprijadi Suprijadi Suprijadi Sutisna Sutisna Syahputra, Tri Siswandi T. Suciati Tarmizi Taher Taufik Adi Nugraha Togar Saragi Toto Winata Toto Winata Toto Winata Widhya Budiawan Widhya Budiawan Yudha Gusti Wibowo Yudi Darma Yulkifli Yulkifli Zaki Suud