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All Journal Jurnal Sains dan Teknologi Jurnal Ilmiah Mahasiswa FEB Prosiding Semnastek Eksplorium : Buletin Pusat Pengembangan Bahan Galian Nuklir Jurnal Kelautan dan Perikanan Terapan (JKPT) Jurnal Penyuluhan Perikanan dan Kelautan Jurnal Teknik Mesin dan Mekatronika (Journal of Mechanical Engineering and Mechatronics) Social, Humanities, and Educational Studies (SHEs): Conference Series Prosiding Seminar Nasional Teknik Mesin Jurnal Mekanik Terapan Jurnal Ilmiah MADIYA: Masyarakat Mandiri Berkarya Aptekmas : Jurnal Pengabdian Kepada Masyarakat Teknologika JURNAL POLI-TEKNOLOGI Jurnal PADE: Pengabdian & Edukasi Metalurgi Jurnal Sains Materi Indonesia Recent in Engineering Science and Technology Eksplorium : Buletin Pusat Pengembangan Bahan Galian Nuklir
Iwan Susanto
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Journal : Recent in Engineering Science and Technology

 1 
Study on the Structure of GaN films deposited on MoS2/Sapphire via Plasma-Assisted Molecular Beam Epitaxy Susanto, Iwan; Tsai, Chi-Yu; Nurzal, Nurzal; Purnomo, M Zalu; Ing-Song Yu
Recent in Engineering Science and Technology Vol. 1 No. 02 (2023): RiESTech Volume 01 No. 02 Years 2023
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v1i02.14

Abstract

The gallium nitride (GaN) films were grown on molybdenum disulfide (MoS2) layers via plasma-assisted molecular beam epitaxy (PA-MBE). The heterostructures of the GaN film were studied using reflection high-energy electron diffraction (RHEED) and HR-XRD. The heterostructures of GaN/MoS2/sapphire were revealed through cross-sectional transmission electron microscopy (TEM). The surface texture of the GaN films was analyzed using FE-SEM. Single-crystal heterostructure GaN films can be obtained on 2D MoS2/c-sapphire. The RHEED demonstrated spot patterns with high intensity showing the single crystal structure constructed in the GaN films. The GaN films on the surface exhibited a hexagonal structure. TEM images taken perpendicular to the surface revealed that, even after 60 minutes of epitaxial growth, the thickness of the GaN films remained consistent at approximately 4 nm. However, the 2D MoS2 layer was not observable in the images due to harm incurred during heteroepitaxial growth. Based on the surface structure, it was found that GaN films were successfully grown on the MoS2 layers using the PA-MBE system.
Electric Vehicle Conversion Study for Sustainable Transport Zainuri, Fuad; Hidayat Tullah, Muhammad; Prasetya, Sonki; Susanto, Iwan; Purnama, Dewin; Subarkah, Rahmat; Ramiati, Tia; Widiyatmoko; Noval, Rahmat
Recent in Engineering Science and Technology Vol. 1 No. 02 (2023): RiESTech Volume 01 No. 02 Years 2023
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v1i02.15

Abstract

The conversion of conventional motor vehicles to electric vehicles has become a popular choice in an effort to reduce greenhouse gas emissions and air pollution from transportation. Electric vehicle conversion involves replacing a gasoline or diesel engine with an electric motor and a reinstalled battery. In this paper, we cover the basics of electric vehicle conversion, conversion methods, and trial results of converted electric vehicles. We also discuss the benefits and challenges of converting to electric vehicles. Some keywords related to this topic include: electric vehicles, vehicle conversion, electric motors, batteries, sustainable transportation.
Pengembangan Penyapu Magnet Otomatis Menggunakan Sistem IoT Susanto, Iwan; Tsai , Chi-Yu; Nurzal , Nurzal; Purnomo, M Zalu; Yu, Ing-Song
Recent in Engineering Science and Technology Vol. 2 No. 01 (2024): RiESTech Volume 02 No. 01 Years 2024
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v2i01.44

Abstract

This study presents a comprehensive analysis of the epitaxial growth and surface characteristics of GaN films on 2D MoS2/c-sapphire substrates. Reflection High Energy Electron Diffraction (RHEED) patterns demonstrate the evolution of the substrate and GaN film surfaces during growth. The subsequent growth of GaN films results in the emergence of hexagonal spots, indicative of a single crystal structure. The brightness intensifies with longer growth times, confirming the improvement in GaN crystalline quality. Atomic Force Microscopy (AFM) images provide further insights into the surface texture. The 2D MoS2/c-sapphire substrate exhibits a textured surface, while GaN films display similar features with bright colors corresponding to GaN clusters. The Root Mean Square (RMS) surface roughness values of GaN films have a higher roughness compared to the substrate. Scanning Electron Microscopy (SEM) confirms the uniform coverage of GaN films, revealing smooth growth and organized hexagonal structures. These findings collectively demonstrate the successful epitaxial growth of GaN films on 2D MoS2/c-sapphire substrates, providing valuable insights into their surface morphology and crystalline structure.
Improved of Process Production Disc Car Whell Type PSD3K (City Car Type) Hasan, Herry Patria; Susanto, Iwan; Belyamin; Kamal, Dianta Mustofa; Ing-Song Yu
Recent in Engineering Science and Technology Vol. 2 No. 04 (2024): RiESTech Volume 02 No. 04 Years 2024
Publisher : MBI

Show Abstract | Download Original | Original Source | Check in Google Scholar | DOI: 10.59511/riestech.v2i04.71

Abstract

This research accelerates the production process with the aim of increasing productivity from Manufacturers engaged in the manufacture of automotive parts currently experiencing an increase in sales orders on the other hand facing problems in productivity due to cracked side dies in rim production to 1400 pcs. The cracking of the side die is due to thermal shock that occurs to accelerate the production process, as a result of which cracks occur in the side die. With the concept of conducting research in the field of direct production then analyzing the characteristics of mold materials, die characteristics, process characteristics, characteristics of finished products before and after changes by testing the results of the laboratory of measuring instruments and conducting trials of variations in machine setting parameters, variations in the production process and products produced. The experiment involved changing the standard temperature from 520 °C–545 °C to 532 °C–538 °C and reducing the immersion time from a minimum of 270–540 seconds to 332 seconds. It reduces the soaking time from 69 seconds to 46 seconds and the aging time from 190 seconds to 180 seconds, increasing the casting productivity from 194,870 Pcs/28 days to 213,311 Pcs/28 days from seven machines, thus meeting the customer's requirement of 200,000 Pcs/28 days without cracking side die. Durability testing on five product samples in accordance with TSD5605G standards confirms that the quality meets customer specifications. The results of this study prove that SKD6 matrial is much stronger than FCD550 against thermal shock. Keywords: thermal shock, die disc car wheel, manufacturing, automotive parts, casting productivity
Co-Authors Abdul Azis Abdillah Adhi, Pribadi Mumpuni Agus Budi Prasetyo Ainun Nidhar, Ainun Alfani Rivaldo Amatullah Fatin, Shafa Anis Rosyidah Arifia Ekayuliana Avifa, Venny Nur Bagus Dwi Putra Belyamin Belyamin Belyamin Budi Prianto Damisih Debby Rachel Dewin Purnama Ersina Rakhma Fachruddin Fachruddin Fahmi, Muhammad Hisyam Fikri, Mohamad Fuad Zainuri Fuad Zainuri, Fuad Garjati, Vina Nanda Ghany Heryana Ghozali Maskie Gunadi, Gun Gun Ramdlan Hapsari, Ade Utami Hasan, Herry Patria Hidayat Tullah, Muhammad Ida Nurhayati Iis Maria Iis Mariam Ilyas, Dede Muhamad Ilyas Ing-Song Yu Isnanda Nuriskasari Jarot Raharjo Jauhari Ali Johny Wahyuadi Soedarsono Kamal, Dianta Mustofa Kurnia Trinopiawan Kurnia Trinopiawan M Sjahrul Annas Moh Zaenal Abidin Eko Putro MRR.Tyas Maheni DK Muhammad Hidayat Tullah Mustofa Kamal, Dianta Muzakki, Rafi Handika Nining Latianingsih Noval, Rahmat Novi Purnama Sari Nugroho Eko Setijogiarto Nurzal, Nurzal Paulus Sukusno Permana, Sulaksana Pramono, Agus Edy Pravitasari, Retna Deca Purnomo, M Zalu Rafdi Abdul Majid Rahman, Haolia Rahmat Subarkah Rahmat Subarkah Rakhma, Ersina Ramadhan, Mochammad Tendi Noer Ramiati, Tia Rio Erwan Pratama Rio Erwan Pratama, Rio Erwan Rivaldo, Alfani Rochsigit Nugroho Rochsigit Nugroho, Rochsigit Sidqi, Adityas Hafidz Siregar, Rolan Sonki Prasetya Sonki Prasetya Sri Mulyati Sri Mulyati Sudrajat, Danu Sulaksana Permana Sulaksana Permana Supriyatna, Yayat Iman Tatun Hayatun Nufus Tia Rahmiati Tjahyono, Seto Todaro, Muhammad Tsai , Chi-Yu Tsai, Chi-Yu Tumigolung, Stefanny Stevie Venny Nur Avifa Vika Rizkia Wahyu Kartika Widiyatmoko Widiyatmoko, Widiyatmoko Yarianto Sugeng Budi Susilo Yarianto Sugeng Budi Susilo, Yarianto Sugeng Budi Yayat Iman Supriyatna Yu, Ing-Song