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All Journal RADIASI: Jurnal Berkala Pendidikan Fisika BERKALA FISIKA EDUSAINS TELKOMNIKA (Telecommunication Computing Electronics and Control) Bulletin of Electrical Engineering and Informatics Fibusi (Jurnal Online Fisika) Jurnal Matematika & Sains JURNAL ILMIAH PENDIDIKAN FISIKA AL BIRUNI Indonesian Journal of Science and Technology Phenomenon : Jurnal Pendidikan MIPA Gravity : Jurnal Ilmiah Penelitian dan Pembelajaran Fisika Journal of Teaching and Learning Physics JIPF (Jurnal Ilmu Pendidikan Fisika) JTERA (Jurnal Teknologi Rekayasa) Spektra: Jurnal Fisika dan Aplikasinya Jurnal Elektronika dan Telekomunikasi Jurnal Pendidikan Fisika dan Sains (JPFS) ABDI MOESTOPO: Jurnal Pengabdian pada Masyarakat Jurnal Abmas Negeri (JAGRI) Online Learning in Educational Research PROSIDING SEMINAR NASIONAL FISIKA (E-JOURNAL) Indonesian Journal of Physics (IJP) Wahana Fisika : Jurnal Fisika dan Terapannya Jurnal Pendidikan MIPA Jurnal Pendidikan Fisika Indonesia IJIS Edu : Indonesian Journal of Integrated Science Education Pedagogia : Jurnal Ilmiah Pendidikan
Lilik Hasanah
Universitas Pendidikan Indonesia
Aerospace Engineering Humanities Astronomy Biochemistry, Genetics & Molecular Biology Chemistry Civil Engineering, Building, Construction & Architecture Computer Science & IT Decision Sciences, Operations Research & Management Earth & Planetary Sciences Education Electrical & Electronics Engineering Energy Engineering Environmental Science Industrial & Manufacturing Engineering Languange, Linguistic, Communication & Media Materials Science & Nanotechnology Mathematics Mechanical Engineering Physics Social Sciences Other

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Journal : BERKALA FISIKA

 1 
Arus Terobosan Pada Transistor Dwikutub Struktur Hetero Si/Si1-xGex/Si Anisotropik Melewati Basis Tergradasi (Graded Base) Hasanah, Lilik; Khairurrijal, Khairurrijal
BERKALA FISIKA Vol 13, No 2 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

Tunneling current in bipolar transistors Si/Si1-xGex/Si anisotropic hetero structure for germanium conditions on a constant basis is not analyzed here. The concentration of germanium in the base which is not constant will result in the potential profile at the base is not flat, but will be graded according to the germanium concentration. Tunneling current calculation is performed semi-analytically and numerically. The calculation result obtained then matched with experimental data. The results show that the results of analytical calculations with results of semi-numerical calculations. While analytical calculations with experimental data only flows from the VBE 0.3 to 0.6 V.   Keywords: Tunneling current, germanium concentration, anisotropic material, transfer matrix method, hetero structure bipolar transistor
Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN Rusdiana, Dadi; Hasanah, Lilik; Suhendi, Endi
BERKALA FISIKA Vol 13, No 1 (2010): Berkala Fisika
Publisher : BERKALA FISIKA

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Abstract

Electrons Mobility in GaN thin films has been determined for temperature variation using approach method to the relaxation time due to the influence of static defect scattering and thermal vibrations. The simulation results show that electron mobility is strongly influenced by environmental temperature, except for the scattering of neutral impuritas type that does not affect the value of the charge carrier mobility even though the external temperature was varied.   Keywords: Electrons Mobility, defect static, thermal vibration
Arus Terobosan Pada Transistor Dwikutub Struktur Hetero Si/Si1-xGex/Si Anisotropik Melewati Basis Tergradasi (Graded Base) Hasanah, Lilik; Khairurrijal, Khairurrijal
BERKALA FISIKA Vol 13, No 2 (2010): Berkala Fisika, Edisi Khusus
Publisher : BERKALA FISIKA

Show Abstract | Download Original | Original Source | Check in Google Scholar | Full PDF (257.573 KB)

Abstract

Tunneling current in bipolar transistors Si/Si1-xGex/Si anisotropic hetero structure for germanium conditions on a constant basis is not analyzed here. The concentration of germanium in the base which is not constant will result in the potential profile at the base is not flat, but will be graded according to the germanium concentration. Tunneling current calculation is performed semi-analytically and numerically. The calculation result obtained then matched with experimental data. The results show that the results of analytical calculations with results of semi-numerical calculations. While analytical calculations with experimental data only flows from the VBE 0.3 to 0.6 V.   Keywords: Tunneling current, germanium concentration, anisotropic material, transfer matrix method, hetero structure bipolar transistor
Co-Authors Aa Juhanda Aay Susilawati Achmad Samsudin Adi Bagus Suryamas Ahmad Aminudin Ajuni B. Pantjawati Almadaniy, Hanif Alta Ridho Anugrah Andhy Setiawan Andrivo Rusydi Apri Wiyono Arjuni B Pantjawati Ayub Subandi Brian Yuliarto Budi Mulyanti Cecep Kusmana Chandra Wulandari Dadin Mahmudin Deni Irawan Deni K. Jamil Dewi Yulianawati Dewi Yulianawati Diana Rochintaniawati E. Suhendi Edy Junaidi Eis Nurzakiyah Eka Pawinanto, Roer Endi Suhendi Endi Suhendi Erwina Oktavianty Euis Sustini Fauzan, Jahril Nur Ghina Aghnia Nur Assyifaa Goib Wiranto Goib Wiranto Goib Wiranto, Goib Hera Novia Herni Yuniarti Suhendi Heru Yuwono Ida Hamidah Ida Hamidah Ida Kaniawati Indra Irawan Iqbal Syamsu Iqbal Syamsu Ismu Wahyudi Iwan Kustiawan Jumril Yunas Jumril Yunas, Jumril Kapıcı, Hasan Özgür Khairurrijal Khairurrijal Kusrini, Priyani Lee, Chang-Wook Leni Anggraeni Lina Aviyanti Luqmanul Hakim Maknun, Johar Maman Budiman Markus Diantoro Mikrajuddin Abdullah Mimin Iryanti Muhammad Zakaria Nada Sadidah Naftalia Trivenia Simbolon Nurjannah Nurjannah Nurul Ashri Nurul Huda Nuryani Rustaman P. Susthita Menon Pamungkas, Rahadian Sri Pangestu, M. Assadillah Priyani Kusrini Rahadian Sri Pamungkas Rahmondia N. Setiadi Rama, Gusti Ramayanti, Suci Ramdhani Ramdhani Ramdhania, Lathifa Nur Rifqi Md Zain, Ahmad Roer Eka Pawinanto, Roer Eka Roslina Roslina, Roslina Safanah, Almas Sahari, Siti Kudnie Sahbudin Shaari Salsabilla Dwita Putri Satria Zulkarnaen Bisri Setiya Utari Setyo Nugroho, Harbi Siti Kudnie Sahari Sudirman Sudirman Sugandi, Gandi Sukirno Sukirno Sukirno Sukirno Susilawati, Aay Tommi Hariyadi, Tommi Toto Winata Tri Lunggari D. C Wahyu Sasongko Putro Waslaluddin MT Widyaningrum Indrasari Winny Liliawati Wulandari, Chandra Yuski Maolid Rizki Faozan Yusuf Nur Wijayanto Yuyu Rachmat Tayubi Zain, Ahmad Zulkarnain