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Journal : Jurnal Matematika

Karakteristik Film Tipis GaAs yang Ditumbuhkan dengan Metode MOCVD Menggunakan Sumber Metalorganik TDMAAs (Trisdimethylaminoarsenic) Andi Suhandi; Heri Sutanto; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 1 (2005)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium Arsenide (GaAs) film have been grown by Metalorganic Chemical Vapor Deposition (MOCVD) method on Semi Insulating-Gallium Arsenide (SI-GaAs) substrates using of Trisdimethylaminoarsenic (TDMAAs) and Trimethylgallium (TMGa) precursors. The characteristic of GaAs film strongly depends on growth temperature. The best crystallinity quality of film was obtained at growth temperature, V/III ratio, reactor pressure, N2 and H2 dilute are 580 oC, 4.8, 50 torr, 300 sccm, respectively. X-ray diffraction data indicate that the GaAs films grown at 580 oC show epitaxial layer with FWHM on (200) peak of about 0,477o. Hall effect measurement data indicate that the grown layer were p-type semiconductor, with Hall mobility and carrier concentration in the range of 346 cm2/V.s and 3.17 x 1017 cm-3, respectively. The band gap of GaAs films determined by photoluminiscense (PL) measurement was 1,42 eV. This value is same as the band gap of bulk GaAs.
GaN-based Double-hetero Film Grown and Fabricated on (0001) Sapphire Substrates by Plasma-assisted MOCVD Heri Sutanto; Edi Supriyanto; Maman Budiman; Pepen Arifin; Sukirno Sukirno; Mohamad Barmawi
Jurnal Matematika & Sains Vol 10, No 2 (2005)
Publisher : Institut Teknologi Bandung

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GaN-based double-hetero film has been grown on (0001) sapphire substrate by plasma-assisted MOCVD method. The structure of film was n-GaN/Al0.25Ga0.75N/In0.3Ga0.7N/Al0.25Ga0.75N/p-GaN. A photoluminescence (PL) peak originating from InGaN active layer has been observed at room temperature, which produced emission wavelength of 453 nm corresponded to energy of 2.74 eV. However, broadening of the peak caused by the crystalline quality of the InGaN epilayer is still poor, which is related with fluctuation of In rich regions.
Karakteristik Struktur dan Listrik Film Tipis GaN yang Ditumbuhkan di atas Substrat Si(111) dengan Metode Plasma Assisted-Metalorganic Chemical Vapor Deposition (PA-MOCVD) Heri Sutanto; Agus Subagio; Edi Supriyanto; Pepen Arifin; Sukirno Sukirno; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 1 (2006)
Publisher : Institut Teknologi Bandung

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Abstract

Gallium nitride (GaN) thin films have been grown on Si(111) substrate by PA-MOCVD method, with trimethylgallium (TMGa) and radical nitrogen resulted by plasma of nitrogen gas as a source of Ga and N respectively. The growth was performed at 675 °C; 0.4 torr; 90 sccm and 0.08-0.12 sccm of substrate temperature, reactor pressure, gas flow of nitrogen and TMGa, respectively. The grown polycrystalline GaN thin films have hexagonal structure and n-type semiconductor. The growth rate of the grown thin films increased with increasing gas flow of TMGa. The Hall mobility value of films is still low due to the presence of O and C impurities. The highest value of mobility was found to be 64.88 cm2/V.s with 5.47 x 1018 cm-3 of carrier concentration.
N-Type Conductivity in Wurtzite Mn-Doped GaN thin Films Grown by Plasma Assisted MOCVD Budi Mulyanti; Agus Subagio; Edi Supriyanto; Heri Sutanto; Fitri Suryani Arsyad; Pepen Arifin; Maman Budiman; Mohamad Barmawi
Jurnal Matematika & Sains Vol 11, No 2 (2006)
Publisher : Institut Teknologi Bandung

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Abstract

Ferromagnetic semiconductor GaN:Mn thin films were successfully grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) method on c-plane sapphire substrate. The films were grown at various Mn source flux in the range of 5 - 40 sccm and growth temperature which was lower than that of MOCVD themal, i.e. in the range of 625-700 °C. Cyclopentadienyl manganese tricarbonyl (CpMnT) was used as a source of Mn. X-ray diffraction patterns confirmed that GaN:Mn films are wurtzite and do not show second phase for film with Mn concentration up to 6.4% at 650 °C of growth temperature. Hall effect measurements show n-type characteristics. The carrier (electron) density tends to decreases and Hall mobility tends to with the increase of Mn concentration is increased. Hysteresis curves observed from VSM measurements indicated that all of the samples are ferromagnetic at room temperature.
Co-Authors . Istadi A Asriyanto A. Suhandi Abellia, Gaby Adam Sumboko Adi Pamungkas Adrian, Muhammad Agus Romadhon Agus Subagio Agus Subagio Agus Subagiyo Agustya Tri Surono Ahmad Pradana Ali Roo'in Mas'uul Alkian, Ilham Amalia, Dinda Andri Yanyah Anggraeni Dwi Haryowati Annisa Vidia Fajarini Ansory Khaerul Apriliyanda Nur Adha Ari Wibawa Budi Santosa Aries Subiantoro Aripin, Muhamat Aris Puji Widodo Arisa Dwi Sakti Aristi Dian Purnama Fitri Aristi Dian Purnama Putri Asriyanto Asriyanto Astri Suppa Supratman Aulia Narindra Mukhtar Ayu Adriyuni Lestari Babay Suhaemi, Babay Basuki Budi Raharjo Bayu Persawan Benyamin Kusumoputro Budi Mulyanti Budiman, Rizki C. I. Sutrisno Catur Rakhmad , Handoko Choirul Anam Choirul Anam AM Diponegoro Dadang Suprijatna Darwin Ismail Desy Armalina Dewi Indiastari Dewi Widyaningsih Didi Candradikusuma Dilla Sistesya Dita Kesumayadi Donni Damara Dwi Adhianto Dwi Antoro, Dwi Dwitarahma, Marshandyar Edi Supriyanto Edwin Zusagka Edy Supriyanto Eko Hidayanto Eko Hidayanto Eko Hidayanto Eko Hidayanto Ery Budiman Fachriza Noor Abdi Fachriza Noor Abdi Fandi Fandi Fatma, Endah Fitri Suryani Arsyad Frederica Thalita Riqti Fredrikus Martono Abing Galih Puspa Saraswati Galih Puspa Saraswati Gede Wiratma Jaya Gede Wiratma Jaya Geoff Dougherty Gultom, Tiopan H. M H Hadiyanto Habik Setiawan Hadiyanto Hadiyanto Hamdy, Muhammad Hamzah Fuadi Hanum Yuda Aditya HAQQI, MUHAMMAD SABILA Hary Kusuma Hendri Widiyandari hermanto, djoko heri Hermawan, Hermawan Hesti Rahayu I Gusti Bagus Wiksuana I Ketut Suada I. Istadi Ida Usman Iis Nurhasanah Iis Nurhasanah Iis Nurhasanah Ilham Alkian Indiastari, Dewi Indras Marhaendrajaya Indro Adi Nugroho Inur Tivani Isrina Nur Laili Iwan Setiyawan Izzati, Alif Nurul Jamal, Mardewi Japeri Japeri Jefri Pratama Susanto, Jefri Pratama Jhonwesly Manik K Sofjan Firdausi K Sofjan Firdausi Kadar Nurjaman Kartini Sinaga Khafidhotun Naimah Lilis Sulastri Lulut Tutik M. R. Luthfi Nurrahma Shofiana Ma’rufah, Hani Maman Budiman Maman Budiman Mardewi Jamal Marediyanti Pusvitasari Maryanto - Masayu Widiastuti Milanitalia Gadys Rosandy Moehamad Barmawi Mohamad Barmawi Mohammad Arief Rahman Muckharom, Ahmad Ali MUH. SYAFRIL SUNUSI Muhammad Arif Ikrimah Muhammad Irwanto Muhammad Jazir Alkas Muhammad Yusuf Mukaromah, Uli Aprilia NALLE, CARLES Y.A. Nastiti, Davina Maritza Ndaru Adyono Niniek Budiarti Niniek Budiarti B Nofi Marlini Nuha Nazilah Sahabudin Nur Hasim Efendi Nur Samsu NURJAMAN TINO ENDASAH Nursidi Yunanto Nurwati Nurwati Obet Lumalan Bijang Pandji Triadyaksa Parrung, Paulus Banto Pepen Arifin Pepen Arifin Prameswari Widya Ningtyas Pratama, Satya Priyono Priyono Qudsiyah, Risma Aimatul Rahmawati Rasito Tursinah, Rasito Ravael Eldad Pongtuluran Reyhana Almira Rahma Riky Ardiyanto Rin Hafsatul Asiah Riski Nihayati Rizky Asdi Kesuma Rizky Bimanda Sakti Rob Danang Priatmaja Rohmaniah, Siti Rosandi, Millanitalia Rosandy, Milanitalia Rosandy, Milanitalia Gadys Rosyad, Muhammad Sabilul Roy Tato Bangun Rudi Setiawan Rudi Sohidi Tohir S. Suryono Sa'adah, Fatkhiyatus Sahabudin, Nuha Nazilah Sanggam Ramantisan Santi Yuli Astuti Sembiring, Rinawati Setyowati, Lita Sheilla Rully Anggita Sheilla Rully Anngita, Sheilla Rully Silvia, Sinta Simbolon, Ruminsar Simbolon, Ruminsar ok Singgih Wibowo Sinta Silvia Sri Soenarti Sriwidodo, Untung Suddin, Alwi Sufwan Durri Sukirno Sukirno Sukirno Sukirno Sulistia Nurdianik Sunarno Sunarno Supriyati Supriyati Susilaningsih , Neni Sutanto, Ferdian Sutikman, Sutikman Syamsul Arifin Syamsul Hidayah Syifa Mustika Tamrin Rahman Teguh Tarsito Toto Winata Tri Windarti Triana Sharly P. Arifin Uli Aprilia Mukaromah veronica, Vera W Widiatini Wahyu Ambikawati Wahyu Setia Budi Wilda Amananti Wilda Amananti Winarsih Winarsih Wiwien Andriyanti WIWIEN ANDRIYANTI Yoel Midel Leitabun Yoyon Wahyono Yoyon Wahyono Yunita Indriyani Zaenal Arifin Zaenal Arifin Zaenul Muhlisin Zakiyah Rahmawati